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NAND01GW4A2CZD6E PDF预览

NAND01GW4A2CZD6E

更新时间： 2024-11-02 07:15:59
品牌 Logo 应用领域
恒忆 - NUMONYX /
页数 文件大小 规格书
53页 1330K
描述
Flash Memory

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NAND01GW4A2CZD6E 数据手册

 浏览型号NAND01GW4A2CZD6E的Datasheet PDF文件第2页浏览型号NAND01GW4A2CZD6E的Datasheet PDF文件第3页浏览型号NAND01GW4A2CZD6E的Datasheet PDF文件第4页浏览型号NAND01GW4A2CZD6E的Datasheet PDF文件第5页浏览型号NAND01GW4A2CZD6E的Datasheet PDF文件第6页浏览型号NAND01GW4A2CZD6E的Datasheet PDF文件第7页 
NAND512xxA2D  
NAND01GxxA2C  
512-Mbit, 1-Gbit, 528-byte/264-word page,  
1.8 V/3 V, NAND flash memories  
Preliminary Data  
Features  
●
High density NAND flash memories  
–
–
512-Mbit, 1-Gbit memory array  
Cost effective solutions for mass  
storage applications  
●
NAND interface  
TSOP48 12 x 20 mm (N)  
FBGA  
–
–
x8 or x16 bus width  
Multiplexed address/ data  
●
●
Supply voltage: 1.8 V, 3 V  
Page size  
–
–
x8 device: (512 + 16 spare) bytes  
x16 device: (256 + 8 spare) words  
VFBGA55 8 x 10 x 1 mm (ZD)  
●
●
Block size  
–
–
x8 device: (16 K + 512 spare) bytes  
x16 device: (8 K + 256 spare) words  
●
●
Hardware data protection: program/erase  
locked during power transitions  
Security features  
Page read/program  
–
–
OTP area  
–
–
–
Random access:  
12 µs (3 V)/15 µs (1.8 V) (max)  
Serial number (unique ID) option  
Sequential access:  
30 ns (3 V)/50 ns (1.8 V) (min)  
●
Data integrity  
–
100,000 program/erase cycles (with  
ECC)  
Page program time: 200 µs (typ)  
●
●
●
●
●
Copy back program mode  
Fast block erase: 1.5 ms (typ)  
Status register  
–
10 years data retention  
●
●
RoHS compliant packages  
Development tools  
Electronic signature  
–
–
Error correction code models  
Chip Enable ‘don’t care’  
Bad blocks management and wear  
leveling algorithms  
–
Hardware simulation models  
Table 1.  
Device summary  
NAND512xxA2D  
NAND01GxxA2C  
NAND512R3A2D  
NAND512R4A2D  
NAND512W3A2D  
NAND512W4A2D  
NAND01GR3A2C  
NAND01GR4A2C  
NAND01GW3A2C  
NAND01GW4A2C  
February 2009  
Rev 2  
1/53  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.numonyx.com  
1
1234567...53

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与NAND01GW4A2CZD6E相关器件

型号 品牌 获取价格 描述 数据表
NAND01GW4A2CZD6F NUMONYX

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 		Flash, 64MX16, 12000ns, PBGA55, 8 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, VFB
NAND01GW4A2DN1T STMICROELECTRONICS

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 		64MX16 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
NAND01GW4A2DZA1 STMICROELECTRONICS

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 		64MX16 FLASH 3V PROM, 12000ns, PBGA63, 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-
NAND01GW4A2DZA1E STMICROELECTRONICS

获取价格

 		Flash, 64MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63
NAND01GW4A2DZA1F STMICROELECTRONICS

获取价格

 		64MX16 FLASH 3V PROM, 12000ns, PBGA63, 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-
NAND01GW4A3BN6E STMICROELECTRONICS

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 		Flash, 64MX16, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
NAND01GW4A3BN6F STMICROELECTRONICS

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 		Flash, 64MX16, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
NAND01GW4A3CZA1T STMICROELECTRONICS

获取价格

 		Flash, 64MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63
NAND01GW4A3DN1E STMICROELECTRONICS

获取价格

 		64MX16 FLASH 3V PROM, 12000ns, PDSO48, 12 X 20 MM, TSOP-48
NAND01GW4A3DZA6E STMICROELECTRONICS

获取价格

 		Flash, 64MX16, 12000ns, PBGA63, 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TFBGA-63

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