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NAND01GW4A2B-KGD PDF预览

NAND01GW4A2B-KGD

更新时间: 2024-02-04 00:59:52
品牌 Logo 应用领域
恒忆 - NUMONYX 闪存存储内存集成电路
页数 文件大小 规格书
48页 1172K
描述
Known Good Die, 1 Gbit (x 8/x 16), 528 Byte/264 word page, 3 V, NAND Flash memory

NAND01GW4A2B-KGD 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.6Is Samacsys:N
最长访问时间:15000 nsJESD-30 代码:X-XUUC-N
内存密度:1073741824 bit内存集成电路类型:FLASH
内存宽度:16功能数量:1
字数:67108864 words字数代码:64000000
工作模式:ASYNCHRONOUS组织:64MX16
封装主体材料:UNSPECIFIED封装代码:DIE
封装形状:UNSPECIFIED封装形式:UNCASED CHIP
并行/串行:PARALLEL编程电压:3 V
认证状态:Not Qualified最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
端子形式:NO LEAD端子位置:UPPER
类型:NAND TYPEBase Number Matches:1

NAND01GW4A2B-KGD 数据手册

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NAND01GW3A2B-KGD  
NAND01GW4A2B-KGD  
Known Good Die, 1 Gbit (x 8/x 16),  
528 Byte/264 word page, 3 V, NAND Flash memory  
Features  
High density NAND Flash memory  
– 1 Gbit memory array  
– 32 Mbit spare area  
– Cost effective solutions for mass storage  
applications  
NAND interface  
– x 8 or x 16 bus width  
– Multiplexed Address/ Data  
– Pinout compatibility for all densities  
Supply voltage:  
– 3.0 V device: V = 2.7 to 3.6 V  
DD  
Page size  
Wafer  
– x 8 device: (512 + 16 spare) bytes  
– x 16 device: (256 + 8 spare) words  
Block size  
– x 8 device: (16 K + 512 spare) bytes  
– x 16 device: (8 K + 256 spare) words  
Serial Number option  
Hardware Data Protection  
Page Read / Program  
– Program/Erase locked during Power  
transitions  
– Random access: 15 µs (3 V) (max)  
– Sequential access: 50 ns (min)  
– Page program time: 200 µs (typ)  
Data Integrity  
– 100,000 Program/Erase cycles (with ECC)  
– 10 years Data Retention  
Copy Back Program mode  
– Fast page copy without external buffering  
Fast Block Erase  
– Block erase time: 2 ms (typ)  
Status Register  
Electronic signature  
Chip Enable ‘Don’t care’  
– Simple interface with microcontroller  
January 2008  
Rev 3  
1/48  
www.numonyx.com  
1

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