N64T1630C1BZ-70I

更新时间： 2024-01-29 01:41:02

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
18页	349K
描述
64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M 】 16 Bits

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N64T1630C1BZ-70I 数据手册

NanoAmp Solutions, Inc.

670 N. McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com

N64T1630C1B

Advance Information

64Mb Ultra-Low Power Asynchronous CMOS PSRAM

4M × 16 Bits

Overview

Features

The N64T1630C1B is an integrated memory

device containing a 64 Mbit Pseudo Static Random

Access Memory using a self-refresh DRAM array

organized as 4,194,304 words by 16 bits. It is

designed to be compatible in operation and

interface to standard 6T SRAMS. The device is

designed for low standby and operating current

and includes a power-down feature to

• Dual voltage rails for optimum power & per-

formance

Vcc - 2.7V - 3.3V

Vccq - 2.7V to 3.3V

• Fast Cycle Times

< 70 nS (60ns future)

PACC

ACC

< 25 nS

• Very low standby current

automatically enter standby mode. The device

includes a ZZ input for deep sleep as well as

several other power saving modes: Partial Array

Self Refresh mode where data is retained in a

portion of the array and Temperature

< 170µA

• Very low operating current

Icc < 25mA

• PASR (Partial Array Self Refresh)

• TCR (Temperature Compensated Refresh)

Compensated Refresh. Both these modes reduce

standby current drain. The N64T1630C1B can be

operated in a standard asynchronous mode and

data can also be read in a 4-word page mode for

fast access times. The die has separate power

rails, VccQ and VssQ for the I/O to be run from a

separate power supply from the device core.

Table 1: Product Family

Standby

Power

Package

Type

Operating

Current(I_SB),

Max

Part Number

I/O Supply

Speed

Temperature

Supply

-25^oC to +85^oC

N64T1630C1BZ

BGA

2.7 - 3.3V

70ns

170µA

Ball Description

Ball Congiguration

A₀

A₃

A₂

A₁

A₄

A₆

A₇

Pin Name

A -A

Pin Function

I/O₈

I/O₀

Address Inputs

Write Enable Input

Chip Enable Input

Deep Sleep Input

Output Enable Input

I/O₉I/O₁₀A₅

V_SSQI/O₁₁A₁₇

V_CCQI/O₁₂A₂₁

I/O₁₄I/O₁₃A₁₄

I/O₁I/O₂

I/O₃V_CC

A₁₆I/O₄V_SS

A₁₅I/O₅I/O₆

Lower Byte Enable Input

Upper Byte Enable Input

Data Inputs/Outputs

I/O₁₅A₁₉

A₁₈A₈

A₁₂

A₉

A₁₃

A₁₀

I/O₇

A₂₀

A₁₁

I/O -I/O

48 Pin BGA (top view)

6 x 8 mm

Power

Ground

Power I/O only

Ground I/O only

CCQ

SSQ

Stock No. 23357- Rev E 07/05

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

12 3 4 5 6 7...18

中文翻译

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