NanoAmp Solutions, Inc.
N64T1618CBB
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
Advance Information
64Mb Ultra-Low Power Async, Page and Burst CMOS PSRAM
4M × 16 Bits
Overview
Features
The N64T1618CBB is an integrated memory
device containing a 64 Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array
organized as 4,194,304 words by 16 bits. It is
designed to be compatible in operation and inter-
face to standard 6T SRAMS. The device is
designed for low standby and operating current
and includes a power-down feature to automati-
cally enter standby mode. The device includes a
deep power-down mode as well as several other
power saving modes: Partial Array Self Refresh
mode where data is retained in a portion of the
array and Temperature Compensated Refresh.
Both these modes reduce standby current drain.
The device can be operated in a standard asyn-
chronous mode, a 16-word page mode and a high-
performance burst mode. The device has separate
power rails, VccQ and VssQ for the I/O to be run
from a separate power supply from the device
core.
• Single Device Supports Asynchronous, Page
and Burst Operations
• Dual voltage rails for optimal performance
VCC
1.70V–1.95V
VCCQ 1.70V–2.25V
VCCQ 2.3V–2.7V
VCCQ 2.7V–3.3V
• Burst Mode Continuous Write Burst
• Burst Mode Read: 4, 8, 16 or Continuous
MAX clock rate: 150 MHz (tCLK = 6.67ns)
Initial latency: 31.5ns (4 clocks) @ 150 MHz
tACLK: 5ns @ 150 MHz
• Configurable Page Size: 16, 32, 64 or 128
word per page.
Interpage read access: 70/85ns
Intrapage read access: 25ns
• Low Power Consumption
Asynchronous Read < 25mA
Intrapage Read < 15mA
Burst Read < 35mA @ 104MHz
Continuous Burst Read < 15mA @ 104MHz
Standby: 120µA
Ball Configuration
1
2
3
4
5
6
A0
A1
A2
LB
OE
CRE
A
B
C
D
E
F
Ultra Low Power Option: 100µA
Deep power-down < 10µA
I/O8
A3
A4
A6
A7
I/O0
UB
CE
I/O9 I/O10 A5
VSSQ I/O11 A17
VCCQ I/O12 A21
I/O14 I/O13 A14
I/O1 I/O2
I/O3 VCC
• Low Power Features
Partial Array Self Refresh (PASR)
Temperature Compensated Refresh (TCR)
Deep Power-Down mode (DPD)
A16 I/O4 VSS
A15 I/O5 I/O6
• High frequency operation up to 150MHz
• Temperature Range of -25°C to +85°C
I/O15 A19
A18 A8
A12
A9
A13
A10
I/O7
A20
NC
WE
A11
G
H
J
WAIT CLK ADV NC
NC
54 Ball BGA (top view)
6 x 8 mm
Standby
Package
Type
Operating
Power
Operating
Current (ISB),
Max
Part Number
I/O Supply
Speed
Temperature
Supply
Current (Icc), Max
1.70V - 1.95
2.3V - 2.7V
2.7V - 3.3V
-25oC to +85oC
N64T1618CBBZ
BGA
1.70V - 1.95
70/85ns
120µA
3 mA @ 1MHz
Stock No. 23310-H 1/05
This is an ADVANCE DATASHEET and subject to change without notice.
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