Datasheet > N64S818HA

N64S818HA

更新时间： 2024-02-21 19:07:10

品牌	Logo	应用领域
安森美 - ONSEMI		静态存储器
页数	文件大小	规格书
15页	203K
描述
64Kb Low Power Serial SRAMs 8K × 8 bit Organization

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N64S818HA 数据手册

N64S818HA

64Kb Low Power Serial SRAMs

8K × 8 bit Organization

Overview

Features

The ON Semiconductor serial SRAM family

includes several integrated memory devices

including this 64K serially accessed Static

• Power Supply Range

1.7 to 1.95V

• Very low standby current

Random Access Memory, internally organized as

8K words by 8 bits. The devices are designed and

fabricated using ON Semiconductor’s advanced

CMOS technology to provide both high-speed

performance and low power. The devices operate

with a single chip select (CS) input and use a

simple Serial Peripheral Interface (SPI) serial bus.

A single data in and data out line is used along with

a clock to access data within the devices. The

N64S818HA devices include a HOLD pin that

allows communication to the device to be paused.

While paused, input transitions will be ignored.

The devices can operate over a wide temperature

As low as 200nA

• Very low operating current

As low as 3mA

• Simple memory control

Single chip select (CS)

Serial input (SI) and serial output (SO)

• Flexible operating modes

Word read and write

Page mode (32 word page)

Burst mode (full array)

• Organization

8K x 8 bit

range of -40 C to +85 C and can be available in

• Self timed write cycles

several standard package offerings.

• Built-in write protection (CS high)

• HOLD pin for pausing communication

• High reliability

Unlimited write cycles

• RoHS Compliant Packages

Green SOIC and TSSOP

Device Options

Typical

Power

Speed

Read/Write

Part Number

Density

Package

Standby

Current

Supply (V)

(MHz)

Operating Current

N64S818HAS2

N64S818HAT2

SOIC

TSSOP

64Kb

1.8

200nA

3 mA @ 1Mhz

July 2008 - Rev. J

Publication Order Number:

N64S818HA/D

12 3 4 5 6 7...15

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