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N64S0818HDAT2-16I PDF预览

N64S0818HDAT2-16I

更新时间: 2024-02-04 03:09:54
品牌 Logo 应用领域
安森美 - ONSEMI 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
15页 200K
描述
8KX8 STANDARD SRAM, PDSO8, 4.40 MM, GREEN, PLASTIC, TSSOP-8

N64S0818HDAT2-16I 技术参数

生命周期:Obsolete零件包装代码:SOIC
包装说明:TSSOP,针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.41风险等级:5.79
JESD-30 代码:R-PDSO-G8长度:4.4 mm
内存密度:65536 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:8字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH并行/串行:SERIAL
认证状态:Not Qualified座面最大高度:1.1 mm
最大供电电压 (Vsup):1.95 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:3 mm
Base Number Matches:1

N64S0818HDAT2-16I 数据手册

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AMI Semiconductor, Inc.  
IMD - Medical Business Unit  
650 N. Mary Ave.  
N64S0818HDA/N64S0830HDA  
Sunnyvale, CA 94085  
PH: 408-962-1900, FAX: 408-962-1997  
64Kb Low Power Serial SRAMs  
8K × 8 bit Organization  
Overview  
Features  
The AMI Semiconductor serial SRAM family  
includes several integrated memory devices  
including this 64K serially accessed Static  
Random Access Memory, internally organized as  
8K words by 8 bits. The devices are designed and  
fabricated using AMI’s advanced CMOS  
• Power Supply Options  
1.8V to 3.6V  
• Very low standby current  
As low as 200nA  
• Very low operating current  
As low as 3mA  
technology to provide both high-speed  
performance and low power. The devices operate  
with a single chip select (CS) input and use a  
simple Serial Peripheral Interface (SPI) serial bus.  
A single data in and data out line is used along with  
a clock to access data within the devices. The  
N64S08xxHDA devices include a HOLD pin that  
allows communication to the device to be paused.  
While paused, input transitions will be ignored.  
The devices can operate over a wide temperature  
• Simple memory control  
Single chip select (CS)  
Serial input (SI) and serial output (SO)  
• Flexible operating modes  
Word read and write  
Page mode (32 word page)  
Burst mode (full array)  
• Organization  
8K x 8 bit  
o
o
range of -40 C to +85 C and can be available in  
• Self timed write cycles  
several standard package offerings.  
• Built-in write protection (CS high)  
• HOLD pin for pausing communication  
• High reliability  
Unlimited write cycles  
• RoHS Compliant Packages  
Green SOIC and TSSOP  
Device Options  
Typical  
Power  
Speed  
Read/Write  
Part Number  
Density  
Feature  
Standby  
Current  
Supply (V)  
(MHz)  
Operating Current  
N64S0818HDA  
N64S0830HDA  
1.8  
3.0  
16  
20  
200nA  
1uA  
64Kb  
HOLD  
3 mA @ 1Mhz  
1
This specification is subject to change without notice.  

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