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N64S0818HDAS2-20I PDF预览

N64S0818HDAS2-20I

更新时间: 2024-11-09 20:38:11
品牌 Logo 应用领域
AMI 时钟静态存储器光电二极管内存集成电路
页数 文件大小 规格书
15页 232K
描述
Standard SRAM, 8KX8, CMOS, PDSO8, 0.150 INCH, GREEN, PLASTIC, SOIC-8

N64S0818HDAS2-20I 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:0.150 INCH, GREEN, PLASTIC, SOIC-8Reach Compliance Code:unknown
风险等级:5.79JESD-30 代码:R-PDSO-G8
JESD-609代码:e3/e4长度:4.9 mm
内存密度:65536 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:8字数:8192 words
字数代码:8000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX8封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:1.75 mm最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN/NICKEL PALLADIUM GOLD
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:40
宽度:3.91 mmBase Number Matches:1

N64S0818HDAS2-20I 数据手册

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AMI Semiconductor, Inc.  
ULP Memory Solutions  
N64S0818HDA/N64S0830HDA  
Advance Information  
670 North McCarthy Blvd. Suite 220  
Milpitas, CA 95035  
PH: 408-935-7777, FAX: 408-935-7770  
64Kb Low Power Serial SRAMs  
8K × 8 bit Organization  
Overview  
Features  
The AMI Semiconductor serial SRAM family  
includes several integrated memory devices  
including this 64K serially accessed Static  
• Power Supply Options  
1.8V to 3.6V  
• Very low standby current  
Random Access Memory, internally organized as  
8K words by 8 bits. The devices are designed and  
fabricated using AMI Semiconductor’s advanced  
CMOS technology to provide both high-speed  
performance and low power. The devices operate  
with a single chip select (CS) input and use a  
simple Serial Peripheral Interface (SPI) serial bus.  
A single data in and data out line is used along with  
a clock to access data within the devices. The  
N64S08xxHDA devices include a HOLD pin that  
allows communication to the device to be paused.  
While paused, input transitions will be ignored.  
The devices can operate over a wide temperature  
As low as 200nA  
• Very low operating current  
As low as 3mA  
• Simple memory control  
Single chip select (CS)  
Serial input (SI) and serial output (SO)  
• Flexible operating modes  
Word read and write  
Page mode (32 word page)  
Burst mode (full array)  
• Organization  
8K x 8 bit  
o
o
range of -40 C to +85 C and can be available in  
• Self timed write cycles  
several standard package offerings.  
• Built-in write protection (CS high)  
• HOLD pin for pausing communication  
• High reliability  
Unlimited write cycles  
• RoHS Compliant Packages  
Green SOIC and TSSOP  
Device Options  
Typical  
Power  
Speed  
Read/Write  
Part Number  
Density  
Feature  
Standby  
Current  
Supply (V)  
(MHz)  
Operating Current  
N64S0818HDA  
N64S0830HDA  
1.8  
3.0  
20  
20  
200nA  
1uA  
64Kb  
HOLD  
3 mA @ 1Mhz  
1
This is a developmental specification and is subject to change without notice.  

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