5秒后页面跳转
N37160D1TBC1S PDF预览

N37160D1TBC1S

更新时间: 2024-02-09 22:30:44
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
1页 21K
描述
Voltage Multiplier Diode, Silicon,

N37160D1TBC1S 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:R-XXMA-X
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.76Base Number Matches:1

N37160D1TBC1S 数据手册

  

与N37160D1TBC1S相关器件

型号 品牌 获取价格 描述 数据表
N37160H1EB1S MICROSEMI

获取价格

Silicon Power Rectifier Assemblies Plate Heatsink
N37160H1EBC1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
N37160H1EC1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
N37160H1EN1S MICROSEMI

获取价格

Silicon Power Rectifier Assemblies Plate Heatsink
N37160H1FB1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
N37160H1FBC1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
N37160H1FN1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
N37160H1TB1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
N37160H1TBC1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,
N37160H1TC1S MICROSEMI

获取价格

Rectifier Diode, 1 Phase, Silicon,