Datasheet > N28F010-120

N28F010-120

更新时间： 2024-09-23 22:29:31

品牌	Logo	应用领域
英特尔 - INTEL		/
页数	文件大小	规格书
30页	407K
描述
1024K (128K x 8) CMOS FLASH MEMORY

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

N28F010-120 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	零件包装代码：	QFJ
包装说明：	0.450 X 0.550 INCH, PLASTIC, LCC-32	针数：	32
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.28
最长访问时间：	120 ns	其他特性：	100000 ERASE/PROGRAM CYCLES
命令用户界面：	YES	数据轮询：	NO
耐久性：	100000 Write/Erase Cycles	JESD-30 代码：	R-PQCC-J32
JESD-609代码：	e0	长度：	13.97 mm
内存密度：	1048576 bit	内存集成电路类型：	FLASH
内存宽度：	8	功能数量：	1
端子数量：	32	字数：	131072 words
字数代码：	128000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	128KX8	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	QCCJ
封装等效代码：	LDCC32,.5X.6	封装形状：	RECTANGULAR
封装形式：	CHIP CARRIER	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	电源：	5 V
编程电压：	12 V	认证状态：	Not Qualified
座面最大高度：	3.56 mm	最大待机电流：	0.0001 A
子类别：	Flash Memories	最大压摆率：	0.03 mA
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	J BEND
端子节距：	1.27 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	切换位：	NO
类型：	NOR TYPE	宽度：	11.43 mm

N28F010-120 数据手册

28F010

1024K (128K x 8) CMOS FLASH MEMORY

Flash Electrical Chip-Erase

Ð 1 Second Typical Chip-Erase

Command Register Architecture for

Microprocessor/Microcontroller

Compatible Write Interface

Quick Pulse Programming Algorithm

Ð 10 ms Typical Byte-Program

Ð 2 Second Chip-Program

Noise Immunity Features

Ð Maximum Latch-Up Immunity

10% V

Tolerance

100,000 Erase/Program Cycles

through EPI Processing

12.0V 5% V

ETOX^TMNonvolatile Flash Technology

Ð EPROM-Compatible Process Base

Ð High-Volume Manufacturing

Experience

High-Performance Read

Ð 65 ns Maximum Access Time

CMOS Low Power Consumption

Ð 10 mA Typical Active Current

Ð 50 mA Typical Standby Current

Ð 0 Watts Data Retention Power

JEDEC-Standard Pinouts

Ð 32-Pin Plastic Dip

Ð 32-Lead PLCC

Ð 32-Lead TSOP

(See Packaging Spec., Order 231369)

Integrated Program/Erase Stop Timer

Extended Temperature Options

Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write

random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar

EPROM technology. Memory contents can be rewritten: in a test socket; in a PROM-programmer socket; on-

board during subassembly test; in-system during final test; and in-system after-sale. The 28F010 increases

memory flexibility, while contributing to time and cost savings.

The 28F010 is a 1024 kilobit nonvolatile memory organized as 131,072 bytes of 8 bits. Intel’s 28F010 is

offered in 32-pin plastic dip or 32-lead PLCC and TSOP packages. Pin assignments conform to JEDEC

standards for byte-wide EPROMs.

Extended erase and program cycling capability is designed into Intel’s ETOX (EPROM Tunnel Oxide) process

technology. Advanced oxide processing, an optimized tunneling structure, and lower electric field combine to

extend reliable cycling beyond that of traditional EEPROMs. With the 12.0V V supply, the 28F010 performs

100,000 erase and program cycles well within the time limits of the Quick Pulse Programming and Quick Erase

algorithms.

Intel’s 28F010 employs advanced CMOS circuitry for systems requiring high-performance access speeds, low

power consumption, and immunity to noise. Its 65 nanosecond access time provides no-WAIT-state perform-

ance for a wide range of microprocessors and microcontrollers. Maximum standby current of 100 mA trans-

lates into power savings when the device is deselected. Finally, the highest degree of latch-up protection is

achieved through Intel’s unique EPI processing. Prevention of latch-up is provided for stresses up to 100 mA

on address and data pins, from 1V to V

1V.

With Intel’s ETOX process base, the 28F010 builds on years of EPROM experience to yield the highest levels

of quality, reliability, and cost-effectiveness.

*Other brands and names are the property of their respective owners.

Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or

copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make

changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.

November 1995

Order Number: 290207-010

12 3 4 5 6 7...30

中文翻译

下载PDF

N28F010-120 替代型号

型号	品牌	替代类型	描述	数据表
TN28F010-120	INTEL	功能相似	28F010 1024K (128K X 8) CMOS FLASH MEMORY
M28F101-120K1	STMICROELECTRONICS	功能相似	1 Mb 128K x 8, Chip Erase FLASH MEMORY

与N28F010-120相关器件

型号	品牌	获取价格	描述	数据表
N28F010-135P1C4	INTEL	获取价格	Flash, 128KX8, 135ns, PQCC32
N28F010-150	INTEL	获取价格	1024K (128K x 8) CMOS FLASH MEMORY
N28F010-150SB48	INTEL	获取价格	Flash, 128KX8, 150ns, PQCC32
N28F010-200	ETC	获取价格	x8 Flash EEPROM
N28F010-200P1C4	ETC	获取价格	x8 Flash EEPROM
N28F010-65	INTEL	获取价格	1024K (128K x 8) CMOS FLASH MEMORY
N28F010-90	INTEL	获取价格	1024K (128K x 8) CMOS FLASH MEMORY
N28F010-90V05	INTEL	获取价格	Flash, 128KX8, 90ns, PQCC32, 0.450 X 0.550 INCH, PLASTIC, LCC-32
N28F020-120	INTEL	获取价格	28F020 2048K (256K X 8) CMOS FLASH MEMORY
N28F020-150	INTEL	获取价格	28F020 2048K (256K X 8) CMOS FLASH MEMORY

与N28F010-120相关文章

SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

6
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

11
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
2024-09-18

79
贸泽上架Tallysman TW5386智能GNSS天线
2024-09-18

71

产品中心

服务支持

精选活动

关于我们

帮助中心

N28F010-120

N28F010-120 技术参数

N28F010-120 数据手册

N28F010-120 替代型号

与N28F010-120相关器件

与N28F010-120相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

N28F010-120

N28F010-120 技术参数

N28F010-120 数据手册

N28F010-120 替代型号

与N28F010-120相关器件

与N28F010-120相关文章

您还可以找

您在本页遇到什么问题？