Datasheet > N2830HE280

N2830HE280

更新时间： 2024-11-19 14:56:39

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
12页	484K
描述
Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。器件电压范围在400V至6500V，适合用于线电压230V至1000V以上的应用（电压更高的应用现可使用我们的中压晶闸管系列）。

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N2830HE280 数据手册

Date:- 13^thJuly, 2021

Data Sheet Issue:- 3

Phase Control Thyristor

Types N2830HE260 and N2830HE280

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

2600-2800

2700-2900

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

I_T(RMS)

I_T(d.c.)

I_TSM

Maximum average on-state current. T_sink=55°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current. T_sink=25°C, (note 2)

D.C. on-state current. T_sink=25°C, (note 4)

2830

1940

1065

5585

4835

Peak non-repetitive surge t_p=10ms, V_rm=0.6V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_rm10V, (note 5)

I²t capacity for fusing t_p=10ms, V_rm=0.6V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_rm10V, (note 5)

A²s

I_TSM2

I²t

6.48 x 10⁶

8.00 x 10⁶

I²t

Maximum rate of rise of on-state current (continuous, 50Hz), (Note 6)

(di/dt)_crMaximum rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

150

A/µs

300

V_RGM

P_G(AV)

P_GM

V_GD

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage, (Note 7)

Operating temperature range

Storage temperature range

0.25

T_HS

-40 to +125

-40 to +150

°C

T_stg

Notes: -

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67% V_DRM, I_TM=1000A, I_FG=2A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Types N2830HE260 and N2830HE280 Issue 3

Page 1 of 12

July 2021

12 3 4 5 6 7...12

中文翻译

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与N2830HE280相关器件

型号	品牌	获取价格	描述	数据表
N2832S001-000000	Carling Technologies	获取价格	ROCKER SWITCH
N283CH02GOO	IXYS	获取价格	Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 200V V(DRM), 200V V(RRM), 1
N283CH04HOO	IXYS	获取价格	Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 400V V(DRM), 400V V(RRM), 1
N283CH06	IXYS	获取价格	Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
N283CH06GOO	IXYS	获取价格	Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
N283CH06HOO	IXYS	获取价格	Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
N283CH06JOO	IXYS	获取价格	Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
N283CH06KOO	IXYS	获取价格	Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
N283CH06LOO	IXYS	获取价格	Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
N283CH08	IXYS	获取价格	Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 800V V(DRM), 800V V(RRM), 1

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