5秒后页面跳转
N2830HE280 PDF预览

N2830HE280

更新时间: 2024-11-06 14:56:39
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
12页 484K
描述
Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。 器件电压范围在400V至6500V,适合用于线电压230V至1000V以上的应用(电压更高的应用现可使用我们的中压晶闸管系列)。

N2830HE280 数据手册

 浏览型号N2830HE280的Datasheet PDF文件第2页浏览型号N2830HE280的Datasheet PDF文件第3页浏览型号N2830HE280的Datasheet PDF文件第4页浏览型号N2830HE280的Datasheet PDF文件第5页浏览型号N2830HE280的Datasheet PDF文件第6页浏览型号N2830HE280的Datasheet PDF文件第7页 
Date:- 13th July, 2021  
Data Sheet Issue:- 3  
Phase Control Thyristor  
Types N2830HE260 and N2830HE280  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
2600-2800  
V
V
V
V
2600-2800  
2600-2800  
2700-2900  
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
IT(RMS)  
IT(d.c.)  
ITSM  
Maximum average on-state current. Tsink=55°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current. Tsink=25°C, (note 2)  
D.C. on-state current. Tsink=25°C, (note 4)  
2830  
1940  
1065  
5585  
4835  
36  
A
A
A
A
A
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)  
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)  
kA  
kA  
A2s  
A2s  
ITSM2  
I2t  
40  
6.48 x 106  
8.00 x 106  
75  
I2t  
Maximum rate of rise of on-state current (continuous, 50Hz), (Note 6)  
(di/dt)cr Maximum rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
150  
A/µs  
300  
VRGM  
PG(AV)  
PGM  
VGD  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
5
V
W
W
V
5
30  
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
Storage temperature range  
0.25  
THS  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Notes: -  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types N2830HE260 and N2830HE280 Issue 3  
Page 1 of 12  
July 2021  

与N2830HE280相关器件

型号 品牌 获取价格 描述 数据表
N2832S001-000000 Carling Technologies

获取价格

ROCKER SWITCH
N283CH02GOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 200V V(DRM), 200V V(RRM), 1
N283CH04HOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 400V V(DRM), 400V V(RRM), 1
N283CH06 IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
N283CH06GOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
N283CH06HOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
N283CH06JOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
N283CH06KOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
N283CH06LOO IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 600V V(DRM), 600V V(RRM), 1
N283CH08 IXYS

获取价格

Silicon Controlled Rectifier, 1180.64A I(T)RMS, 752000mA I(T), 800V V(DRM), 800V V(RRM), 1