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N25Q128A11ESF40G PDF预览

N25Q128A11ESF40G

更新时间: 2024-12-01 14:59:03
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
82页 1091K
描述
128Mb, 1.8V, Multiple I/O, 4KB Subsector Erase on Boot Sectors, XIP Enabled, Serial NOR Flash Memory with 108 MHz Serial Peripheral Interface

N25Q128A11ESF40G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SOP, SOP16,.4
Reach Compliance Code:compliant风险等级:8.28
最大时钟频率 (fCLK):108 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-G16
长度:10.3 mm内存密度:134217728 bit
内存集成电路类型:FLASH内存宽度:1
功能数量:1端子数量:16
字数:134217728 words字数代码:128000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128MX1
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP16,.4封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:SERIAL
峰值回流温度(摄氏度):260电源:1.8 V
编程电压:1.8 V认证状态:Not Qualified
座面最大高度:2.65 mm串行总线类型:SPI
最大待机电流:0.00001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):2 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30类型:NOR TYPE
宽度:7.5 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

N25Q128A11ESF40G 数据手册

 浏览型号N25Q128A11ESF40G的Datasheet PDF文件第2页浏览型号N25Q128A11ESF40G的Datasheet PDF文件第3页浏览型号N25Q128A11ESF40G的Datasheet PDF文件第4页浏览型号N25Q128A11ESF40G的Datasheet PDF文件第5页浏览型号N25Q128A11ESF40G的Datasheet PDF文件第6页浏览型号N25Q128A11ESF40G的Datasheet PDF文件第7页 
128Mb, Multiple I/O Serial Flash Memory  
Features  
Micron Serial NOR Flash Memory  
1.8V, Multiple I/O, 4KB Sector Erase  
N25Q128A  
• Write protection  
Features  
– Software write protection applicable to every  
64KB sector via volatile lock bit  
– Hardware write protection: protected area size  
defined by five nonvolatile bits (BP0, BP1, BP2,  
BP3, and TB)  
• SPI-compatible serial bus interface  
• 108 MHz (MAX) clock frequency  
• 1.7–2.0V single supply voltage  
• Dual/quad I/O instruction provides increased  
throughput up to 432 MHz  
– Additional smart protections, available upon re-  
quest  
• Supported protocols  
– Extended SPI, dual I/O, and quad I/O  
• Execute-in-place (XIP) mode for all three protocols  
– Configurable via volatile or nonvolatile registers  
– Enables memory to work in XIP mode directly af-  
ter power-on  
• PROGRAM/ERASE SUSPEND operations  
• Continuous read of entire memory via a single com-  
mand  
– Fast read  
– Quad or dual output fast read  
– Quad or dual I/O fast read  
• Flexible to fit application  
– Configurable number of dummy cycles  
– Output buffer configurable  
• Electronic signature  
– JEDEC-standard 2-byte signature (BB18h)  
– Unique ID code (UID): 17 read-only bytes, in-  
cluding:  
Two additional extended device ID (EDID)  
bytes to identify device factory options  
• Customized factory data (14 bytes)  
• Minimum 100,000 ERASE cycles per sector  
• More than 20 years data retention  
• Packages JEDEC standard, all RoHS compliant  
– F7 = V-PDFN-8 6mm x 5mm Sawn (MLP8 6mm x  
5mm)  
– F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm)  
– 12 = T-PBGA-24b05 6mm x 8mm  
– SF = SOP2-16 300 mils body width (SO16W)  
– SE = SOP2-8 208 mils body width (SO8W)  
• Software reset  
• 64-byte, user-lockable, one-time programmable  
(OTP) dedicated area  
• Erase capability  
– Subsector erase 4KB uniform granularity blocks  
– Sector erase 64KB uniform granularity blocks  
– Full-chip erase  
PDF: 09005aef845665f6  
n25q_128mb_1_8v_65nm.pdf - Rev. L 01/2013 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2012 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

N25Q128A11ESF40G 替代型号

型号 品牌 替代类型 描述 数据表
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