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N25Q128A11E1240E PDF预览

N25Q128A11E1240E

更新时间: 2024-11-30 14:59:03
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
82页 1091K
描述
128Mb, 1.8V, Multiple I/O, 4KB Subsector Erase on Boot Sectors, XIP Enabled, Serial NOR Flash Memory with 108 MHz Serial Peripheral Interface

N25Q128A11E1240E 数据手册

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128Mb, Multiple I/O Serial Flash Memory  
Features  
Micron Serial NOR Flash Memory  
1.8V, Multiple I/O, 4KB Sector Erase  
N25Q128A  
• Write protection  
Features  
– Software write protection applicable to every  
64KB sector via volatile lock bit  
– Hardware write protection: protected area size  
defined by five nonvolatile bits (BP0, BP1, BP2,  
BP3, and TB)  
• SPI-compatible serial bus interface  
• 108 MHz (MAX) clock frequency  
• 1.7–2.0V single supply voltage  
• Dual/quad I/O instruction provides increased  
throughput up to 432 MHz  
– Additional smart protections, available upon re-  
quest  
• Supported protocols  
– Extended SPI, dual I/O, and quad I/O  
• Execute-in-place (XIP) mode for all three protocols  
– Configurable via volatile or nonvolatile registers  
– Enables memory to work in XIP mode directly af-  
ter power-on  
• PROGRAM/ERASE SUSPEND operations  
• Continuous read of entire memory via a single com-  
mand  
– Fast read  
– Quad or dual output fast read  
– Quad or dual I/O fast read  
• Flexible to fit application  
– Configurable number of dummy cycles  
– Output buffer configurable  
• Electronic signature  
– JEDEC-standard 2-byte signature (BB18h)  
– Unique ID code (UID): 17 read-only bytes, in-  
cluding:  
Two additional extended device ID (EDID)  
bytes to identify device factory options  
• Customized factory data (14 bytes)  
• Minimum 100,000 ERASE cycles per sector  
• More than 20 years data retention  
• Packages JEDEC standard, all RoHS compliant  
– F7 = V-PDFN-8 6mm x 5mm Sawn (MLP8 6mm x  
5mm)  
– F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm)  
– 12 = T-PBGA-24b05 6mm x 8mm  
– SF = SOP2-16 300 mils body width (SO16W)  
– SE = SOP2-8 208 mils body width (SO8W)  
• Software reset  
• 64-byte, user-lockable, one-time programmable  
(OTP) dedicated area  
• Erase capability  
– Subsector erase 4KB uniform granularity blocks  
– Sector erase 64KB uniform granularity blocks  
– Full-chip erase  
PDF: 09005aef845665f6  
n25q_128mb_1_8v_65nm.pdf - Rev. L 01/2013 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2012 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

N25Q128A11E1240E 替代型号

型号 品牌 替代类型 描述 数据表
N25Q128A11E1241E MICRON

完全替代

This tech note describes considerations in thermal applications for Micron memory devices,
N25Q128A11E1240F MICRON

完全替代

128Mb, 1.8V, Multiple I/O, 4KB Subsector Erase on Boot Sectors, XIP Enabled, Serial NOR Fl

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