Datasheet > N25Q064A13EW9D0F

N25Q064A13EW9D0F

更新时间： 2024-11-30 14:59:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
132页	1301K
描述
This tech note describes considerations in thermal applications for Micron memory devices, including thermal impedance, thermal resistance, junction temperature, operating temperature, memory reliability, reliability modeling, device reliability, and high-temperature electronics.

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N25Q064A13EW9D0F 数据手册

Micron Confidential and Proprietary

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory

Features

NAND Flash Memory

MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4,

MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP,

MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4,

MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4,

MT29F16G08AJADAWP

• First block (block address 00h) is valid when ship-

ped from factory with ECC. For minimum required

ECC, see Error Management.

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cy-

cles are less than 1000

Features

• Open NAND Flash Interface (ONFI) 1.0-compliant¹

• Single-level cell (SLC) technology

• Organization

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 2048 blocks per plane

– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks

16Gb: 16,384 blocks

• RESET (FFh) required as first command after pow-

er-on

• Alternate method of device initialization (Nand_In-

it) after power up (contact factory)

• Internal data move operations supported within the

plane from which data is read

• Quality and reliability

– Data retention: 10 years

– Endurance: 100,000 PROGRAM/ERASE cycles

• Operating voltage range

• Asynchronous I/O performance

–

^tRC/^tWC: 20ns (3.3V), 25ns (1.8V)

• Array performance

– Read page: 25µs ³

– Program page: 200µs (TYP: 1.8V, 3.3V)³

– Erase block: 700µs (TYP)

– V_CC: 2.7–3.6V

– V_CC: 1.7–1.95V

• Operating temperature:

• Command set: ONFI NAND Flash Protocol

• Advanced command set

– Commercial: 0°C to +70°C

– Industrial (IT): –40ºC to +85ºC

• Package

– Program page cache mode⁴

– Read page cache mode ⁴

– 48-pin TSOP type 1, CPL²

– 63-ball VFBGA

– One-time programmable (OTP) mode

– Two-plane commands ⁴

– Interleaved die (LUN) operations

– Read unique ID

– Block lock (1.8V only)

– Internal data move

• Operation status byte provides software method for

detecting

1. The ONFI 1.0 specification is available at

www.onfi.org.

Notes:

2. CPL = Center parting line.

3. See Program and Erase Characteristics for

^tR_ECC and ^tPROG_ECC specifications.

4. These commands supported only with ECC

disabled.

– Operation completion

– Pass/fail condition

– Write-protect status

• Ready/Busy# (R/B#) signal provides a hardware

method of detecting operation completion

• WP# signal: Write protect entire device

PDF: 09005aef83b25735

m60a_4gb_8gb_16gb_ecc_nand.pdf - Rev. N 10/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...132

中文翻译

下载PDF

与N25Q064A13EW9D0F相关器件

型号	品牌	获取价格	描述	数据表
N25Q128	NUMONYX	获取价格	128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, seria
N25Q128_1	NUMONYX	获取价格	128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors,XiP enabled, serial fl
N25Q128A11B1240E	NUMONYX	获取价格	128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, seria
N25Q128A11B1240F	NUMONYX	获取价格	128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, seria
N25Q128A11B1240G	NUMONYX	获取价格	128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, seria
N25Q128A11B1241F	MICRON	获取价格	128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, seria
N25Q128A11B12A0E	NUMONYX	获取价格	128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, seria
N25Q128A11B12A0F	NUMONYX	获取价格	128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, seria
N25Q128A11B12A0G	NUMONYX	获取价格	128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, seria
N25Q128A11B12H0E	NUMONYX	获取价格	128-Mbit, 1.8 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, seria

与N25Q064A13EW9D0F相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

49
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

38
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

67
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

62

产品中心

服务支持

精选活动

关于我们

帮助中心

N25Q064A13EW9D0F

N25Q064A13EW9D0F 数据手册

与N25Q064A13EW9D0F相关器件

与N25Q064A13EW9D0F相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

N25Q064A13EW9D0F

N25Q064A13EW9D0F 数据手册

与N25Q064A13EW9D0F相关器件

与N25Q064A13EW9D0F相关文章

您还可以找

您在本页遇到什么问题？