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N25Q064A13ESED0F

更新时间： 2024-11-30 15:18:27
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
86页 1187K
描述
64Mb, Multiple I/O, 4KB Subsector Erase, XiP Enabled, Serial NOR Flash Memory with 108 MHz Serial Peripheral Interface

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64Mb, 3V, Multiple I/O Serial Flash Memory  
Features  
Micron Serial NOR Flash Memory  
3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase  
Enhanced Program and Erase Speed  
N25Q064A13ExxDxx  
• Write protection  
Features  
– Software write protection applicable to every  
64KB sector via volatile lock bit  
– Hardware write protection: protected area size  
defined by five nonvolatile bits (BP0, BP1, BP2,  
BP3, and TB)  
• SPI-compatible serial bus interface  
• 108 MHz (MAX) clock frequency  
• 2.7–3.6V single supply voltage  
• Dual/quad I/O instruction provides increased  
throughput up to 432 MHz  
– Additional smart protections, available upon re-  
quest  
• Supported protocols  
– Extended SPI, dual I/O, and quad I/O  
• Execute-in-place (XIP) mode for all three protocols  
– Configurable via volatile or nonvolatile registers  
– Enables memory to work in XIP mode directly af-  
ter power-on  
• PROGRAM/ERASE SUSPEND operations  
• Continuous read of entire memory via a single com-  
mand  
– Fast read  
– Quad or dual output fast read  
– Quad or dual I/O fast read  
• Flexible to fit application  
– Configurable number of dummy cycles  
– Output buffer configurable  
• Electronic signature  
– JEDEC-standard 2-byte signature (BA17h)  
– Unique ID code (UID): 17 read-only bytes, in-  
cluding:  
• Two additional extended device ID (EDID)  
bytes to identify device factory options  
• Customized factory data (14 bytes)  
• Minimum 100,000 ERASE cycles per sector  
• More than 20 years data retention  
• Packages JEDEC standard, all RoHS compliant  
– W7 = W-PDFN-8 6mm x 5mm (MLP8 6mm x  
5mm)  
– W9 = W-PDFN-8 8mm x 6mm (MLP8 8mm x  
6mm)  
– 12 = T-PBGA-24b05 6mm x 8mm  
– 14 = T-PBGA-24b05 6mm x 8mm, 4x6 ball array  
– SF = SOP2-16 300 mils body width (SO16W)  
– SE = SOP2-8 208 mils body width (SO8W)  
• 64-byte, user-lockable, one-time programmable  
(OTP) dedicated area  
• HOLD# feature disabled: Available in dedicated part  
number  
• Erase capability  
– Subsector erase 4KB uniform granularity blocks  
– Subsector erase 32KB uniform granularity blocks  
– Sector erase 64KB uniform granularity blocks  
– Full-chip erase  
• Enhanced performance PROGRAM/ERASE opera-  
tion speed  
– PAGE program: 0.2 ms (TYP)  
– 64KB Sector erase: 300 ms (TYP)  
– 32KB Subsector erase: 160 ms (TYP)  
– 4KB Subsector erase: 50ms (TYP)  
– Bulk erase: 26 s (TYP)  
PDF: 09005aef858a2bcf  
n25q_64a_3v_13_exx_dxx.pdf - Rev. C 4/15 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2014 Micron Technology, Inc. All rights reserved.  
1
Products and specifications discussed herein are subject to change by Micron without notice.  
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 		This tech note describes considerations in thermal applications for Micron memory devices,

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