Datasheet > N25Q064A13ESEA0F

N25Q064A13ESEA0F

更新时间： 2024-11-30 14:58:59

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
81页	1082K
描述
N25Q064A

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中文翻译

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数据手册

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N25Q064A13ESEA0F 数据手册

64Mb, 3V, Multiple I/O Serial Flash Memory

Features

Micron Serial NOR Flash Memory

3V, Multiple I/O, 4KB Sector Erase

N25Q064A

• Write protection

Features

– Software write protection applicable to every

64KB sector via volatile lock bit

– Hardware write protection: protected area size

defined by five nonvolatile bits (BP0, BP1, BP2,

BP3, and TB)

• SPI-compatible serial bus interface

• 108 MHz (MAX) clock frequency

• 2.7–3.6V single supply voltage

• Dual/quad I/O instruction provides increased

throughput up to 432 MHz

– Additional smart protections, available upon re-

quest

• Supported protocols

– Extended SPI, dual I/O, and quad I/O

• Execute-in-place (XIP) mode for all three protocols

– Configurable via volatile or nonvolatile registers

– Enables memory to work in XIP mode directly af-

ter power-on

• PROGRAM/ERASE SUSPEND operations

• Continuous read of entire memory via a single com-

mand

– Fast read

– Quad or dual output fast read

– Quad or dual I/O fast read

• Flexible to fit application

– Configurable number of dummy cycles

– Output buffer configurable

• Electronic signature

– JEDEC-standard 2-byte signature (BA17h)

– Unique ID code (UID): 17 read-only bytes, in-

cluding:

• Two additional extended device ID (EDID)

bytes to identify device factory options

• Customized factory data (14 bytes)

• Minimum 100,000 ERASE cycles per sector

• More than 20 years data retention

• Packages JEDEC standard, all RoHS compliant

– F6 = V-PDFN-8 6mm x 5mm (MLP8 6mm x 5mm)

– F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm)

– 12 = T-PBGA-24b05 6mm x 8mm

– 14 = T-PBGA-24b05 6mm x 8mm, 4x6 ball array

– SF = SOP2-16 300 mils body width (SO16W)

– SE = SOP2-8 208 mils body width (SO8W)

• 64-byte, user-lockable, one-time programmable

(OTP) dedicated area

• Erase capability

– Subsector erase 4KB uniform granularity blocks

– Sector erase 64KB uniform granularity blocks

– Full-chip erase

PDF: 09005aef845665f4

n25q_64mb_3v_65nm.pdf - Rev. K 08/13 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...81

中文翻译

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与N25Q064A13ESEA0F相关器件

型号	品牌	获取价格	描述	数据表
N25Q064A13ESED0E	MICRON	获取价格	64Mb, Multiple I/O, 4KB Subsector Erase, XiP Enabled, Serial NOR Flash Memory with 108 MHz
N25Q064A13ESED0F	MICRON	获取价格	64Mb, Multiple I/O, 4KB Subsector Erase, XiP Enabled, Serial NOR Flash Memory with 108 MHz
N25Q064A13ESED0G	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
N25Q064A13ESEH0E	MICRON	获取价格	N25Q064A
N25Q064A13ESEH0F	MICRON	获取价格	N25Q064A
N25Q064A13ESF40E	MICRON	获取价格	N25Q064A
N25Q064A13ESF40F	MICRON	获取价格	N25Q064A
N25Q064A13ESF40G	MICRON	获取价格	Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
N25Q064A13ESF42F	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
N25Q064A13ESF42G	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,

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