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N25Q032A13EF440E PDF预览

N25Q032A13EF440E

更新时间: 2024-11-28 12:01:47
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
82页 884K
描述
SPI-compatible serial bus interface

N25Q032A13EF440E 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DFN
包装说明:HVSON, SOLCC8,.12,32针数:8
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.65
最大时钟频率 (fCLK):108 MHz数据保留时间-最小值:20
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PDSO-N8
长度:4 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:1
功能数量:1端子数量:8
字数:33554432 words字数代码:32000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:32MX1
封装主体材料:PLASTIC/EPOXY封装代码:HVSON
封装等效代码:SOLCC8,.12,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:0.6 mm串行总线类型:SPI
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:NO LEAD
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED类型:NOR TYPE
宽度:3 mm写保护:HARDWARE/SOFTWARE
Base Number Matches:1

N25Q032A13EF440E 数据手册

 浏览型号N25Q032A13EF440E的Datasheet PDF文件第2页浏览型号N25Q032A13EF440E的Datasheet PDF文件第3页浏览型号N25Q032A13EF440E的Datasheet PDF文件第4页浏览型号N25Q032A13EF440E的Datasheet PDF文件第5页浏览型号N25Q032A13EF440E的Datasheet PDF文件第6页浏览型号N25Q032A13EF440E的Datasheet PDF文件第7页 
32Mb, 3V, Multiple I/O Serial Flash Memory  
Features  
Micron Serial NOR Flash Memory  
3V, Multiple I/O, 4KB Sector Erase  
N25Q032A13E1240x, N25Q032A13ESE40x, N25Q032A13EF640x,  
N25Q032A13EF840x, N25Q032A13ESF40x, N25Q032A13ESC40x,  
N25Q032A13EF440E, N25Q032A13EF440F, N25Q032A13ESCA0F  
N25Q032A13ESFA0F, N25Q032A13ESFH0F  
• Write protection  
– Software write protection applicable to every  
Features  
• SPI-compatible serial bus interface  
• 108 MHz (MAX) clock frequency  
• 2.7–3.6V single supply voltage  
• Dual/quad I/O instruction provides increased  
throughput up to 432 MHz  
64KB sector via volatile lock bit  
– Hardware write protection: protected area size  
defined by four nonvolatile bits (BP0, BP1, BP2,  
and TB)  
– Additional smart protections, available upon re-  
quest  
• Supported protocols  
– Extended SPI, dual I/O, and quad I/O  
• Execute-in-place (XIP) mode for all three protocols  
– Configurable via volatile or nonvolatile registers  
– Enables memory to work in XIP mode directly af-  
ter power-on  
• PROGRAM/ERASE SUSPEND operations  
• Continuous read of entire memory via a single com-  
mand  
• Electronic signature  
– JEDEC-standard, 2-byte signature (BA16h)  
– Unique ID code: 17 read-only bytes, including:  
Two additional extended device ID bytes to  
identify device factory options  
• Customized factory data (14 bytes)  
• Minimum 100,000 ERASE cycles per sector  
• More than 20 years data retention  
– FAST READ  
• Packages (JEDEC-standard, RoHS compliant)  
– F4 = U-PDFN-8 4mm x 3mm (MLP8)  
– F6 = V-PDFN-8 6mm x 5mm (MLP8)  
– F8 = V-PDFN-8 8mm x 6mm (MLP8)  
– 12 = T-PBGA-24b05 6mm x 8mm  
– QUAD or DUAL OUTPUT FAST READ  
– QUAD or DUAL I/O FAST READ  
• Flexible to fit application  
– Configurable number of dummy cycles  
– Configurable output buffer  
– SC = SOP2-8 150 mils body width (SO8N)  
– SF = SOP2-16 300 mils body width (SO16W)  
– SE = SOP2-8 208 mils body width (SO8W)  
– RESET function available upon customer request  
• 64-byte, user-lockable, one-time programmable  
(OTP) dedicated area  
• Erase capability  
– Subsector erase 4KB uniform granularity blocks  
– Sector erase 64KB uniform granularity blocks  
– Full-chip erase  
PDF: 09005aef84566622  
n25q_32mb_3v_65nm.pdf - Rev. G 9/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2011 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

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