Datasheet > N25Q032A11ESF40F

N25Q032A11ESF40F

更新时间： 2024-11-30 14:59:03

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
82页	885K
描述
Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memory with 108 MHz Serial Peripheral Interface

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N25Q032A11ESF40F 数据手册

32Mb, 1.8V, Multiple I/O Serial Flash Memory

Features

Micron Serial NOR Flash Memory

1.8V, Multiple I/O, 4KB Sector Erase

N25Q032A11E124xx, N25Q032A11EF440x, N25Q032A11ESE40x,

N25Q032A11ESF40x, N25Q032A11EF840x, N25Q032A11EF640x

• Write protection

– Software write protection applicable to every

Features

• SPI-compatible serial bus interface

• 108 MHz (MAX) clock frequency

• 1.7–2.0V single supply voltage

• Dual/quad I/O instruction provides increased

throughput up to 432 MHz

64KB sector via volatile lock bit

– Hardware write protection: protected area size

defined by four nonvolatile bits (BP0, BP1, BP2,

and TB)

– Additional smart protections, available upon re-

quest

• Supported protocols

– Extended SPI, dual I/O, and quad I/O

• Execute-in-place (XIP) mode for all three protocols

– Configurable via volatile or nonvolatile registers

– Enables memory to work in XIP mode directly af-

ter power-on

• PROGRAM/ERASE SUSPEND operations

• Continuous read of entire memory via a single com-

mand

– Fast read

– Quad or dual output fast read

– Quad or dual I/O fast read

• Flexible to fit application

– Configurable number of dummy cycles

– Output buffer configurable

• Electronic signature

– JEDEC-standard 2-byte signature (BB16h)

– Unique ID code (UID): 17 read-only bytes, in-

cluding:

• Two additional extended device ID (EDID)

bytes to identify device factory options

• Customized factory data (14 bytes)

• Minimum 100,000 ERASE cycles per sector

• More than 20 years data retention

• Packages JEDEC standard, all RoHS compliant

– F4 = UF-PDFN-8 4mm x 3mm (MLP8 4mm x

3mm)

– F6 = V-PDFN-8 6mm x 5mm ( MLP8 6mm x

5mm )

• Software reset

– F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm)

– 12 = T-PBGA-24b05 6mm x 8mm

– SF = SOP2-16 300 mils body width (SO16W)

– SE = SOP2-8 208 mils body width (SO8W)

• 64-byte, user-lockable, one-time programmable

(OTP) dedicated area

• Erase capability

– Subsector erase 4KB uniform granularity blocks

– Sector erase 64KB uniform granularity blocks

– Full-chip erase

PDF: 09005aef84566617

n25q_32mb_1_8v_65nm.pdf - Rev. E 6/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...82

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N25Q032A11ESF40F 替代型号

型号	品牌	替代类型	描述	数据表
N25Q032A11ESF40G	MICRON	类似代替	Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor

与N25Q032A11ESF40F相关器件

型号	品牌	获取价格	描述	数据表
N25Q032A11ESF40G	MICRON	获取价格	Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A13E1240E	MICRON	获取价格	32-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase, XiP enabled, serial flash memory with
N25Q032A13E1240F	MICRON	获取价格	32-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase, XiP enabled, serial flash memory with
N25Q032A13E1240x	MICRON	获取价格	SPI-compatible serial bus interface
N25Q032A13E1241E	MICRON	获取价格	32Mb, 3V, Multiple I/O, 4KB Subsector Erase, XiP Enabled, Serial NOR Flash Memory with 108
N25Q032A13E1241F	MICRON	获取价格	32-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase, XiP enabled, serial flash memory with
N25Q032A13EF440E	MICRON	获取价格	SPI-compatible serial bus interface
N25Q032A13EF440F	MICRON	获取价格	SPI-compatible serial bus interface
N25Q032A13EF640E	MICRON	获取价格	32-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase, XiP enabled, serial flash memory with
N25Q032A13EF640F	MICRON	获取价格	32-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase, XiP enabled, serial flash memory with

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