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N25Q032A11ESE40G PDF预览

N25Q032A11ESE40G

更新时间: 2024-11-28 12:10:43
品牌 Logo 应用领域
镁光 - MICRON 闪存
页数 文件大小 规格书
82页 885K
描述
32Mb, 1.8V, Multiple I/O Serial Flash Memory

N25Q032A11ESE40G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOIC
包装说明:SOP,针数:8
Reach Compliance Code:compliantECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.65
最大时钟频率 (fCLK):108 MHzJESD-30 代码:S-PDSO-G8
长度:5.285 mm内存密度:33554432 bit
内存集成电路类型:FLASH内存宽度:32
功能数量:1端子数量:8
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX32
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:SQUARE封装形式:SMALL OUTLINE
并行/串行:SERIAL峰值回流温度(摄氏度):NOT SPECIFIED
编程电压:1.8 V座面最大高度:2.16 mm
最大供电电压 (Vsup):2 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:5.285 mmBase Number Matches:1

N25Q032A11ESE40G 数据手册

 浏览型号N25Q032A11ESE40G的Datasheet PDF文件第2页浏览型号N25Q032A11ESE40G的Datasheet PDF文件第3页浏览型号N25Q032A11ESE40G的Datasheet PDF文件第4页浏览型号N25Q032A11ESE40G的Datasheet PDF文件第5页浏览型号N25Q032A11ESE40G的Datasheet PDF文件第6页浏览型号N25Q032A11ESE40G的Datasheet PDF文件第7页 
32Mb, 1.8V, Multiple I/O Serial Flash Memory  
Features  
Micron Serial NOR Flash Memory  
1.8V, Multiple I/O, 4KB Sector Erase  
N25Q032A11E124xx, N25Q032A11EF440x, N25Q032A11ESE40x,  
N25Q032A11ESF40x, N25Q032A11EF840x, N25Q032A11EF640x  
• Write protection  
– Software write protection applicable to every  
Features  
• SPI-compatible serial bus interface  
• 108 MHz (MAX) clock frequency  
• 1.7–2.0V single supply voltage  
• Dual/quad I/O instruction provides increased  
throughput up to 432 MHz  
64KB sector via volatile lock bit  
– Hardware write protection: protected area size  
defined by four nonvolatile bits (BP0, BP1, BP2,  
and TB)  
– Additional smart protections, available upon re-  
quest  
• Supported protocols  
– Extended SPI, dual I/O, and quad I/O  
• Execute-in-place (XIP) mode for all three protocols  
– Configurable via volatile or nonvolatile registers  
– Enables memory to work in XIP mode directly af-  
ter power-on  
• PROGRAM/ERASE SUSPEND operations  
• Continuous read of entire memory via a single com-  
mand  
– Fast read  
– Quad or dual output fast read  
– Quad or dual I/O fast read  
• Flexible to fit application  
– Configurable number of dummy cycles  
– Output buffer configurable  
• Electronic signature  
– JEDEC-standard 2-byte signature (BB16h)  
– Unique ID code (UID): 17 read-only bytes, in-  
cluding:  
Two additional extended device ID (EDID)  
bytes to identify device factory options  
• Customized factory data (14 bytes)  
• Minimum 100,000 ERASE cycles per sector  
• More than 20 years data retention  
• Packages JEDEC standard, all RoHS compliant  
– F4 = UF-PDFN-8 4mm x 3mm (MLP8 4mm x  
3mm)  
– F6 = V-PDFN-8 6mm x 5mm ( MLP8 6mm x  
5mm )  
• Software reset  
– F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm)  
– 12 = T-PBGA-24b05 6mm x 8mm  
– SF = SOP2-16 300 mils body width (SO16W)  
– SE = SOP2-8 208 mils body width (SO8W)  
• 64-byte, user-lockable, one-time programmable  
(OTP) dedicated area  
• Erase capability  
– Subsector erase 4KB uniform granularity blocks  
– Sector erase 64KB uniform granularity blocks  
– Full-chip erase  
PDF: 09005aef84566617  
n25q_32mb_1_8v_65nm.pdf - Rev. E 6/12 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2012 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

N25Q032A11ESE40G 替代型号

型号 品牌 替代类型 描述 数据表
N25Q032A11ESE40F MICRON

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