5秒后页面跳转
N25Q016A11ESC40G PDF预览

N25Q016A11ESC40G

更新时间: 2024-11-29 15:19:19
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
77页 1046K
描述
N25Q016A11E

N25Q016A11ESC40G 数据手册

 浏览型号N25Q016A11ESC40G的Datasheet PDF文件第2页浏览型号N25Q016A11ESC40G的Datasheet PDF文件第3页浏览型号N25Q016A11ESC40G的Datasheet PDF文件第4页浏览型号N25Q016A11ESC40G的Datasheet PDF文件第5页浏览型号N25Q016A11ESC40G的Datasheet PDF文件第6页浏览型号N25Q016A11ESC40G的Datasheet PDF文件第7页 
16Mb, Multiple I/O Serial Flash Memory  
Features  
Micron Serial NOR Flash Memory  
1.8V, Multiple I/O, 4KB Sector Erase  
N25Q016A11E  
• Deep power-down mode: 5µA (TYP)  
• Write protection  
– Software write protection applicable to every  
64KB sector via volatile lock bit  
– Hardware write protection: protected area size  
defined by five nonvolatile bits (BP0, BP1, BP2,  
and TB)  
– Additional smart protections, available upon re-  
quest  
Features  
• SPI-compatible serial bus interface  
• 108 MHz (MAX) clock frequency  
• 1.7–2.0V single supply voltage  
• Dual/quad I/O instruction provides increased  
throughput up to 432 MB/s  
• Supported protocols  
– Extended SPI, dual I/O, and quad I/O  
• Execute-in-place (XIP) mode for all three protocols  
– Configurable via volatile or nonvolatile registers  
– Enables memory to work in XIP mode directly af-  
ter power-on  
• Electronic signature  
– JEDEC-standard 2-byte signature (BB15h)  
Two additional extended device ID (EDID) bytes  
to identify device factory options  
• PROGRAM/ERASE SUSPEND operations  
• Continuous read of entire memory via a single com-  
mand  
– Fast read  
– Quad or dual output fast read  
– Quad or dual I/O fast read  
• Flexible to fit application  
– Configurable number of dummy cycles  
– Output buffer configurable  
– Unique ID code (UID): 14 read-only bytes  
• Minimum 100,000 ERASE cycles per sector  
• More than 20 years data retention  
• Packages JEDEC standard, all RoHS compliant  
– F4 = U-PDFN-8/4mm x 3mm (MLP8)  
– F6 = V-PDFN-8/6mm x 5mm (MLP8)  
– SC = SOP2-8/150 mil (SO8N)  
– 51 = XF-SCSP-8/2mm x 2.8mm (XFCSP)  
• Software reset  
• Hardware RESET function available upon customer  
request  
• 64-byte, user-lockable, one-time programmable  
(OTP) dedicated area  
• Erase capability  
– Subsector erase 4KB uniform granularity blocks  
– Subsector erase 32KB uniform granularity blocks  
– Sector erase 64KB uniform granularity blocks  
09005aef84a4754f  
n25q_16mb_1_8v_65nm.pdf - Rev. H 01/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
1
© 2012 Micron Technology, Inc. All rights reserved.  
Products and specifications discussed herein are subject to change by Micron without notice.  

N25Q016A11ESC40G 替代型号

型号 品牌 替代类型 描述 数据表
N25Q016A11ESC40F MICRON

功能相似

N25Q016A11E

与N25Q016A11ESC40G相关器件

型号 品牌 获取价格 描述 数据表
N25Q032A MICRON

获取价格

Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
N25Q032A11EF440E MICRON

获取价格

Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A11EF440F MICRON

获取价格

Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A11EF640E MICRON

获取价格

Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A11EF640F MICRON

获取价格

Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A11ESE40F MICRON

获取价格

Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A11ESE40G MICRON

获取价格

32Mb, 1.8V, Multiple I/O Serial Flash Memory
N25Q032A11ESEA0F MICRON

获取价格

Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A11ESF40F MICRON

获取价格

Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A11ESF40G MICRON

获取价格

Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor