Datasheet > N25Q016A11EF640E

N25Q016A11EF640E

更新时间： 2024-11-06 15:19:19

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
77页	1046K
描述
N25Q016A11E

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数据手册

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N25Q016A11EF640E 数据手册

16Mb, Multiple I/O Serial Flash Memory

Features

Micron Serial NOR Flash Memory

1.8V, Multiple I/O, 4KB Sector Erase

N25Q016A11E

• Deep power-down mode: 5µA (TYP)

• Write protection

– Software write protection applicable to every

64KB sector via volatile lock bit

– Hardware write protection: protected area size

defined by five nonvolatile bits (BP0, BP1, BP2,

and TB)

– Additional smart protections, available upon re-

quest

Features

• SPI-compatible serial bus interface

• 108 MHz (MAX) clock frequency

• 1.7–2.0V single supply voltage

• Dual/quad I/O instruction provides increased

throughput up to 432 MB/s

• Supported protocols

– Extended SPI, dual I/O, and quad I/O

• Execute-in-place (XIP) mode for all three protocols

– Configurable via volatile or nonvolatile registers

– Enables memory to work in XIP mode directly af-

ter power-on

• Electronic signature

– JEDEC-standard 2-byte signature (BB15h)

– Two additional extended device ID (EDID) bytes

to identify device factory options

• PROGRAM/ERASE SUSPEND operations

• Continuous read of entire memory via a single com-

mand

– Fast read

– Quad or dual output fast read

– Quad or dual I/O fast read

• Flexible to fit application

– Configurable number of dummy cycles

– Output buffer configurable

– Unique ID code (UID): 14 read-only bytes

• Minimum 100,000 ERASE cycles per sector

• More than 20 years data retention

• Packages JEDEC standard, all RoHS compliant

– F4 = U-PDFN-8/4mm x 3mm (MLP8)

– F6 = V-PDFN-8/6mm x 5mm (MLP8)

– SC = SOP2-8/150 mil (SO8N)

– 51 = XF-SCSP-8/2mm x 2.8mm (XFCSP)

• Software reset

• Hardware RESET function available upon customer

request

• 64-byte, user-lockable, one-time programmable

(OTP) dedicated area

• Erase capability

– Subsector erase 4KB uniform granularity blocks

– Subsector erase 32KB uniform granularity blocks

– Sector erase 64KB uniform granularity blocks

09005aef84a4754f

n25q_16mb_1_8v_65nm.pdf - Rev. H 01/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...77

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与N25Q016A11EF640E相关器件

型号	品牌	获取价格	描述	数据表
N25Q016A11EF640F	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
N25Q016A11ESC40F	MICRON	获取价格	N25Q016A11E
N25Q016A11ESC40G	MICRON	获取价格	N25Q016A11E
N25Q032A	MICRON	获取价格	Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
N25Q032A11EF440E	MICRON	获取价格	Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A11EF440F	MICRON	获取价格	Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A11EF640E	MICRON	获取价格	Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A11EF640F	MICRON	获取价格	Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A11ESE40F	MICRON	获取价格	Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor
N25Q032A11ESE40G	MICRON	获取价格	32Mb, 1.8V, Multiple I/O Serial Flash Memory

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