Datasheet > N25Q00AA13G1240E

N25Q00AA13G1240E

更新时间： 2024-11-29 15:18:19

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
90页	1202K
描述
N25Q 1Gb, 3V, Multiple I/O Serial NOR Flash Memory

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替代型号

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N25Q00AA13G1240E 数据手册

1Gb, 3V, Multiple I/O Serial NOR Flash Memory

Features

Micron Serial NOR Flash Memory

3V, Multiple I/O, 4KB Sector Erase

N25Q00AA

• Write protection

– Software write protection applicable to every

64KB sector via volatile lock bit

– Hardware write protection: protected area size

defined by five nonvolatile bits (BP0, BP1, BP2,

BP3, and TB)

Features

• Stacked device (four 256Mb die)

• SPI-compatible serial bus interface

• Double transfer rate (DTR) mode

• 2.7–3.6V single supply voltage

• 108 MHz (MAX) clock frequency supported for all

protocols in single transfer rate (STR) mode

• 54 MHz (MAX) clock frequency supported for all

protocols in DTR mode

• Dual/quad I/O instruction provides increased

throughput up to 54 MB/s

• Supported protocols

– Extended SPI, dual I/O, and quad I/O

– DTR mode supported on all

• Execute-in-place (XIP) mode for all three protocols

– Configurable via volatile or nonvolatile registers

– Enables memory to work in XIP mode directly af-

ter power-on

• PROGRAM/ERASE SUSPEND operations

• Available protocols

– Additional smart protections, available upon re-

quest

• Electronic signature

– JEDEC-standard 2-byte signature (BA21h)

– Unique ID code (UID): 17 read-only bytes,

including: Two additional extended device ID

bytes to identify device factory options; and cus-

tomized factory data (14 bytes)

• Minimum 100,000 ERASE cycles per sector

• More than 20 years data retention

• Packages – JEDEC-standard, all RoHS-compliant

– L-PBGA-24b05/6mm x 8mm ( also known as

LBGA24 )

– SOP2-16/300 mils (also known as SO16W, SO16-

Wide, SOIC-16 )

– Available READ operations

– Quad or dual output fast read

– Quad or dual I/O fast read

• Flexible to fit application

– Configurable number of dummy cycles

– Output buffer configurable

• Software reset

• 3-byte and 4-byte addressability mode supported

• 64-byte, user-lockable, one-time programmable

(OTP) dedicated area

• Erase capability

– Subsector erase 4KB uniform granularity blocks

– Sector erase 64KB uniform granularity blocks

– Single die erase (32MB)

09005aef8480cede

n25q_1gb_3V_65nm.pdf - Rev. N 02/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...90

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N25Q00AA13G1240E 替代型号

型号	品牌	替代类型	描述	数据表
N25Q00AA13G1240F	MICRON	功能相似	N25Q 1Gb, 3V, Multiple I/O Serial NOR Flash Memory

与N25Q00AA13G1240E相关器件

型号	品牌	获取价格	描述	数据表
N25Q00AA13G1240F	MICRON	获取价格	N25Q 1Gb, 3V, Multiple I/O Serial NOR Flash Memory
N25Q00AA13GSF40F	MICRON	获取价格	N25Q 1Gb, 3V, Multiple I/O Serial NOR Flash Memory
N25Q00AA13GSF40G	MICRON	获取价格	N25Q 1Gb, 3V, Multiple I/O Serial NOR Flash Memory
N25Q016A11E5140F	MICRON	获取价格	N25Q016A11E
N25Q016A11EF640E	MICRON	获取价格	N25Q016A11E
N25Q016A11EF640F	MICRON	获取价格	This tech note describes considerations in thermal applications for Micron memory devices,
N25Q016A11ESC40F	MICRON	获取价格	N25Q016A11E
N25Q016A11ESC40G	MICRON	获取价格	N25Q016A11E
N25Q032A	MICRON	获取价格	Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
N25Q032A11EF440E	MICRON	获取价格	Rev. I, 32Mb, 1.8V, Multiple I/O, 4KB Subsector Erase, XIP Enabled, Serial NOR Flash Memor

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