5秒后页面跳转
N2172ZC420 PDF预览

N2172ZC420

更新时间: 2024-11-05 19:40:23
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
10页 134K
描述
Silicon Controlled Rectifier, 4285A I(T)RMS, 4200V V(DRM), 4200V V(RRM), 1 Element

N2172ZC420 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X3
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84配置:SINGLE
最大直流栅极触发电流:300 mAJESD-30 代码:O-CXDB-X3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:4285 A断态重复峰值电压:4200 V
重复峰值反向电压:4200 V表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
触发设备类型:SCRBase Number Matches:1

N2172ZC420 数据手册

 浏览型号N2172ZC420的Datasheet PDF文件第2页浏览型号N2172ZC420的Datasheet PDF文件第3页浏览型号N2172ZC420的Datasheet PDF文件第4页浏览型号N2172ZC420的Datasheet PDF文件第5页浏览型号N2172ZC420的Datasheet PDF文件第6页浏览型号N2172ZC420的Datasheet PDF文件第7页 
Date:- 13 Nov, 2001  
Data Sheet Issue:- 1  
WESTCODE  
Phase Control Thyristor  
Types N2172ZC400 to N2172ZC450  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
4000-4500  
4000-4500  
4000-4500  
4100-4600  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current. Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current. Tsink=25°C, (note 2)  
D.C. on-state current. Tsink=25°C, (note 4)  
2172  
1492  
A
A
905  
A
4285  
A
3720  
A
Peak non-repetitive surge tp=10ms, Vrm=0.6VRRM, (note 5)  
28000  
33500  
3.92×106  
5.61×106  
150  
A
A
Peak non-repetitive surge tp=10ms, Vrm 10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=0.6VRRM, (note 5)  
A2s  
A2s  
A/µs  
A/µs  
V
I2t  
I2t capacity for fusing tp=10ms, Vrm 10V, (note 5)  
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
diT/dt  
300  
VRGM  
PG(AV)  
PGM  
VGD  
5
Mean forward gate power  
5
W
Peak forward gate power  
30  
W
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
0.25  
V
THS  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes: -  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, ITM=1000A, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types N2172ZC400 to N2172ZC450 Issue 1.  
Page 1 of 10  
November, 2001  

与N2172ZC420相关器件

型号 品牌 获取价格 描述 数据表
N2172ZC440 IXYS

获取价格

Silicon Controlled Rectifier, 4285A I(T)RMS, 4400V V(DRM), 4400V V(RRM), 1 Element
N2172ZC450 LITTELFUSE

获取价格

Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。 器件电压范围在400V至
N2172ZD400 LITTELFUSE

获取价格

Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。 器件电压范围在400V至
N2172ZD450 LITTELFUSE

获取价格

Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。 器件电压范围在400V至
N2180B1EB1S MICROSEMI

获取价格

Silicon Power Rectifier Assemblies Plate Heatsink
N2180B1EBC1S MICROSEMI

获取价格

Bridge Rectifier Diode, 1 Phase, Silicon,
N2180B1EC1S MICROSEMI

获取价格

Bridge Rectifier Diode, 1 Phase, Silicon,
N2180B1EN1S MICROSEMI

获取价格

Silicon Power Rectifier Assemblies Plate Heatsink
N2180B1FB1S MICROSEMI

获取价格

Bridge Rectifier Diode, 1 Phase, Silicon,
N2180B1FBC1S MICROSEMI

获取价格

Bridge Rectifier Diode, 1 Phase, Silicon,