Datasheet > N2086NC060

N2086NC060

更新时间： 2024-11-06 14:56:39

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
12页	736K
描述
Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。器件电压范围在400V至6500V，适合用于线电压230V至1000V以上的应用（电压更高的应用现可使用我们的中压晶闸管系列）。

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N2086NC060 数据手册

Date:- 02 August 2012

Data Sheet Issue:- 3

Phase Control Thyristor

Types N2086NC060 to N2086NC100

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

600-1000

700-1100

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

I_T(RMS)

I_T(d.c.)

I_TSM

Maximum average on-state current. T_sink=55°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current. T_sink=25°C, (note 2)

D.C. on-state current. T_sink=25°C, (note 4)

2086

1378

792

4207

3439

Peak non-repetitive surge t_p=10ms, V_rm=60%V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_rm£10V, (note 5)

I²t capacity for fusing t_p=10ms, V_rm=60%V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_rm£10V, (note 5)

35.0

A²s

I_TSM2

I²t

38.0

6.13×10⁶

7.22×10⁶

250

I²t

Maximum rate of rise of on-state current (continuous, 50Hz), (Note 6)

(di/dt)_crMaximum rate of rise of on-state current (repetitive, 50Hz, 60s), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

500

A/µs

1000

V_RGM

P_G(AV)

P_GM

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

Operating temperature range

Storage temperature range

°C

T_{j op}

-40 to +125

-40 to +150

T_stg

Notes: -

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67% V_DRM, I_TM=1000A, I_FG=2A, t_r£0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Types N2086NC060 to N2086NC100 Issue 3.

Page 1 of 11

August 2012

12 3 4 5 6 7...12

中文翻译

下载PDF

与N2086NC060相关器件

型号	品牌	获取价格	描述	数据表
N2086NC100	LITTELFUSE	获取价格	Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。器件电压范围在400V至
N2086NS060	IXYS	获取价格	Silicon Controlled Rectifier, 4207A I(T)RMS, 3439000mA I(T), 600V V(DRM), 600V V(RRM), 1 E
N2086NS060-100	IXYS	获取价格	Silicon Controlled Rectifier, 4207A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element
N2086NS080	IXYS	获取价格	Silicon Controlled Rectifier, 4207A I(T)RMS, 3439000mA I(T), 800V V(DRM), 800V V(RRM), 1 E
N20A	NSC	获取价格	8-Bit TRI-STATE-R Bidirectional Transceiver (Inverting)
N20SP001L	YAGEO	获取价格	负温度系数热敏电阻
N20SP001M	YAGEO	获取价格	负温度系数热敏电阻
N20SP002L	YAGEO	获取价格	负温度系数热敏电阻
N20SP002M	YAGEO	获取价格	负温度系数热敏电阻
N20SP004L	YAGEO	获取价格	负温度系数热敏电阻

与N2086NC060相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

9
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

N2086NC060

N2086NC060 数据手册

与N2086NC060相关器件

与N2086NC060相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

N2086NC060

N2086NC060 数据手册

与N2086NC060相关器件

与N2086NC060相关文章

您还可以找

您在本页遇到什么问题？