Datasheet > N2015ML220

N2015ML220

更新时间： 2024-11-21 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
12页	751K
描述
Littelfuse提供业界最全面的标准相位控制晶闸管系列之一。器件电压范围在400V至6500V，适合用于线电压230V至1000V以上的应用（电压更高的应用现可使用我们的中压晶闸管系列）。

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N2015ML220 数据手册

Date:- 25 March, 2013

Data Sheet Issue:- A1

Wespack Phase Control Thyristor

Types N2015ML200 to N2015ML220

Development Type No.: NX311ML200-220

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

2000-2200

2100-2300

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)M

Maximum average on-state current, T_sink=55°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 2)

Maximum average on-state current. T_sink=85°C, (note 3)

2015

1385

775

I_T(RMS)MNominal RMS on-state current, T_sink=25°C, (note 2)

3975

3455

32.4

I_T(d.c.)

I_TSM

I_TSM2

I²t

D.C. on-state current, T_sink=25°C, (note 4)

Peak non-repetitive surge t_p=10ms, V_rm=60%V_RRM, (note 5)

Peak non-repetitive surge t_p=10ms, V_rm£10V, (note 5)

I²t capacity for fusing t_p=10ms, V_rm=60%V_RRM, (note 5)

I²t capacity for fusing t_p=10ms, V_rm£10V, (note 5)

A²s

35.7

5.25×10⁶

6.37×10⁶

100

I²t

(continuous, 50Hz)

(repetitive, 50Hz, 60s)

(non-repetitive)

(di/dt)_crCritical rate of rise of on-state current (note 6)

200

A/µs

400

V_RGM

P_G(AV)

P_GM

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

Operating temperature range

Storage temperature range

°C

T_{j op}

-40 to +125

-40 to +150

T_stg

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67% V_DRM, I_TM=2000A, I_FG=2A, t_r£0.5µs, T_case=125°C.

Provisional Data Sheet. Types N2015ML200 to N2015ML220 Issue A1

Page 1 of 11

March, 2013

12 3 4 5 6 7...12

中文翻译

下载PDF

与N2015ML220相关器件

型号	品牌	获取价格	描述	数据表
N20160B1EB1S	MICROSEMI	获取价格	Bridge Rectifier Diode, 1 Phase, Silicon,
N20160B1EN1S	MICROSEMI	获取价格	Bridge Rectifier Diode, 1 Phase, Silicon,
N20160B1FB1S	MICROSEMI	获取价格	Bridge Rectifier Diode, 1 Phase, Silicon,
N20160B1FBC1S	MICROSEMI	获取价格	Bridge Rectifier Diode, 1 Phase, Silicon,
N20160B1FC1S	MICROSEMI	获取价格	Bridge Rectifier Diode, 1 Phase, Silicon,
N20160B1TBC1S	MICROSEMI	获取价格	Bridge Rectifier Diode, 1 Phase, Silicon,
N20160B1TC1S	MICROSEMI	获取价格	Bridge Rectifier Diode, 1 Phase, Silicon,
N20160C1EB1S	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, Silicon,
N20160C1EB1SE3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, Silicon,
N20160C1EBC1S	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, Silicon,

与N2015ML220相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

N2015ML220

N2015ML220 数据手册

与N2015ML220相关器件

与N2015ML220相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

N2015ML220

N2015ML220 数据手册

与N2015ML220相关器件

与N2015ML220相关文章

您还可以找

您在本页遇到什么问题？