N16T1630C2BZ2-70

更新时间： 2024-11-26 07:03:23

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
9页	239K
描述
16Mb Ultra-Low Power Asynchronous CMOS SRAM

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N16T1630C2BZ2-70 数据手册

NanoAmp Solutions, Inc.

1982 Zanker Road, San Jose, CA 95112

ph: 408-573-8878, FAX: 408-573-8877

www.nanoamp.com

N16T1630C2B

16Mb Ultra-Low Power Asynchronous CMOS SRAM

1M x 16 bit

Overview

Features

The N16T1630C2B is an integrated memory

device containing a low power 16 Mbit SRAM built

using a self-refresh DRAM array organized as

1,024,576 words by 16 bits. It is designed to be

identical in operation and interface to standard 6T

SRAMS. The device is designed for low standby

and operating current and includes a power-down

feature to automatically enter standby mode. The

device operates with two chip enable (CE1 and

CE2) controls and output enable (OE) to allow for

easy memory expansion. Byte controls (UB and

LB) allow the upper and lower bytes to be

• Single Wide Power Supply Range

2.7 to 3.6 Volts

• Very low standby current

100µA at 3.0V (Max)

• Very low operating current

2.0mA at 3.0V and 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Very fast access time

55ns address access option

35ns OE access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

• Green option for BGA package

accessed independently and can also be used to

deselect the device. The N16T1630C2B is optimal

for various applications where low-power is critical

such as battery backup and hand-held devices.

The device can operate over a very wide

temperature range of -40 C to +85 C and is

available in JEDEC standard BGA packages

compatible with other standard 1Mb x 16 SRAMs.

Product Family

Standby

Operating

Current (Icc),

Max

Package

Type

Operating

Power

Current (I_SB),

Part Number

Speed

Temperature

Supply (Vcc)

Max @ 3.0V

N16T1630C2BZ

N16T1630C2BZ2 Green 48 - BGA

48 - BGA

70ns

55ns

-40^oC to +85^oC

2.7V - 3.6V

100 µA

3 mA @ 1MHz

Pin Configuration (Top View)

Pin Description

A₀

A₁

A₂

Pin Name

A₀-A₁₉

CE1, CE2

I/O₀-I/O₁₅

Pin Function

CE2

Address Inputs

Write Enable Input

Chip Enable Input

I/O₈

A₃

A₄

A₆

A₇

I/O₀

CE1

I/O₉I/O₁₀A₅

V_SSI/O₁₁A₁₇

I/O₁I/O₂

I/O₃V_CC

Output Enable Input

Lower Byte Enable Input

Upper Byte Enable Input

Data Inputs/Outputs

V_CCI/O₁₂

I/O₁₄I/O₁₃A₁₄

A₁₆I/O₄V_SS

A₁₅I/O₅I/O₆

I/O₁₅A₁₉

A₁₈A₈

A₁₂

A₉

A₁₃

A₁₀

I/O₇

A₁₁

V_CC

V_SS

Power

Ground

Not Connected

48 Ball BGA

6 x 8 mm

(DOC#14-02-007 REV F ECN# 01-1103)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

12 3 4 5 6 7...9

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与N16T1630C2BZ2-70相关器件

型号	品牌	获取价格	描述	数据表
N16T1630C2BZ2-70I	NANOAMP	获取价格	暂无描述
N16T1630C2BZ-55	NANOAMP	获取价格	16Mb Ultra-Low Power Asynchronous CMOS SRAM
N16T1630C2BZ-55I	NANOAMP	获取价格	Standard SRAM, 1MX16, 55ns, CMOS, PBGA48
N16T1630C2BZ-70	NANOAMP	获取价格	16Mb Ultra-Low Power Asynchronous CMOS SRAM
N16T1630C2BZ-70I	NANOAMP	获取价格	Standard SRAM, 1MX16, 70ns, CMOS, PBGA48
N1705	ETC	获取价格	7-bit and 8-bit codes and their extension
N170CH03	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 138000mA I(T), 300V V(DRM),
N170CH04HOO	IXYS	获取价格	Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 400V V(DRM), 400V V(RRM), 1 E
N170CH08	IXYS	获取价格	Silicon Controlled Rectifier, 533.8A I(T)RMS, 138000mA I(T), 800V V(DRM), 800V V(RRM), 1 E
N170CH08GOO	IXYS	获取价格	Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 800V V(DRM), 800V V(RRM), 1 E

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