Datasheet > 存储 > SRAM> N16T1630C2BZ-55I

N16T1630C2BZ-55I

更新时间： 2024-11-26 13:11:59

品牌	Logo	应用领域
NANOAMP		静态存储器
页数	文件大小	规格书
9页	239K
描述
Standard SRAM, 1MX16, 55ns, CMOS, PBGA48

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技术参数
数据手册

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N16T1630C2BZ-55I 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	FBGA, BGA48,6X8,30	Reach Compliance Code：	unknown
风险等级：	5.88	最长访问时间：	55 ns
I/O 类型：	COMMON	JESD-30 代码：	R-PBGA-B48
内存密度：	16777216 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	16	端子数量：	48
字数：	1048576 words	字数代码：	1000000
工作模式：	ASYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	1MX16
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	FBGA	封装等效代码：	BGA48,6X8,30
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, FINE PITCH
并行/串行：	PARALLEL	电源：	3/3.3 V
认证状态：	Not Qualified	最小待机电流：	2.7 V
子类别：	SRAMs	最大压摆率：	0.025 mA
表面贴装：	YES	技术：	CMOS
温度等级：	INDUSTRIAL	端子形式：	BALL
端子节距：	0.75 mm	端子位置：	BOTTOM
Base Number Matches：	1

N16T1630C2BZ-55I 数据手册

NanoAmp Solutions, Inc.

1982 Zanker Road, San Jose, CA 95112

ph: 408-573-8878, FAX: 408-573-8877

www.nanoamp.com

N16T1630C2B

16Mb Ultra-Low Power Asynchronous CMOS SRAM

1M x 16 bit

Overview

Features

The N16T1630C2B is an integrated memory

device containing a low power 16 Mbit SRAM built

using a self-refresh DRAM array organized as

1,024,576 words by 16 bits. It is designed to be

identical in operation and interface to standard 6T

SRAMS. The device is designed for low standby

and operating current and includes a power-down

feature to automatically enter standby mode. The

device operates with two chip enable (CE1 and

CE2) controls and output enable (OE) to allow for

easy memory expansion. Byte controls (UB and

LB) allow the upper and lower bytes to be

• Single Wide Power Supply Range

2.7 to 3.6 Volts

• Very low standby current

100µA at 3.0V (Max)

• Very low operating current

2.0mA at 3.0V and 1µs (Typical)

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

• Very fast access time

55ns address access option

35ns OE access time

• Automatic power down to standby mode

• TTL compatible three-state output driver

• Green option for BGA package

accessed independently and can also be used to

deselect the device. The N16T1630C2B is optimal

for various applications where low-power is critical

such as battery backup and hand-held devices.

The device can operate over a very wide

temperature range of -40 C to +85 C and is

available in JEDEC standard BGA packages

compatible with other standard 1Mb x 16 SRAMs.

Product Family

Standby

Operating

Current (Icc),

Max

Package

Type

Operating

Power

Current (I_SB),

Part Number

Speed

Temperature

Supply (Vcc)

Max @ 3.0V

N16T1630C2BZ

N16T1630C2BZ2 Green 48 - BGA

48 - BGA

70ns

55ns

-40^oC to +85^oC

2.7V - 3.6V

100 µA

3 mA @ 1MHz

Pin Configuration (Top View)

Pin Description

A₀

A₁

A₂

Pin Name

A₀-A₁₉

CE1, CE2

I/O₀-I/O₁₅

Pin Function

CE2

Address Inputs

Write Enable Input

Chip Enable Input

I/O₈

A₃

A₄

A₆

A₇

I/O₀

CE1

I/O₉I/O₁₀A₅

V_SSI/O₁₁A₁₇

I/O₁I/O₂

I/O₃V_CC

Output Enable Input

Lower Byte Enable Input

Upper Byte Enable Input

Data Inputs/Outputs

V_CCI/O₁₂

I/O₁₄I/O₁₃A₁₄

A₁₆I/O₄V_SS

A₁₅I/O₅I/O₆

I/O₁₅A₁₉

A₁₈A₈

A₁₂

A₉

A₁₃

A₁₀

I/O₇

A₁₁

V_CC

V_SS

Power

Ground

Not Connected

48 Ball BGA

6 x 8 mm

(DOC#14-02-007 REV F ECN# 01-1103)

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

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与N16T1630C2BZ-55I相关器件

型号	品牌	获取价格	描述	数据表
N16T1630C2BZ-70	NANOAMP	获取价格	16Mb Ultra-Low Power Asynchronous CMOS SRAM
N16T1630C2BZ-70I	NANOAMP	获取价格	Standard SRAM, 1MX16, 70ns, CMOS, PBGA48
N1705	ETC	获取价格	7-bit and 8-bit codes and their extension
N170CH03	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 138000mA I(T), 300V V(DRM),
N170CH04HOO	IXYS	获取价格	Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 400V V(DRM), 400V V(RRM), 1 E
N170CH08	IXYS	获取价格	Silicon Controlled Rectifier, 533.8A I(T)RMS, 138000mA I(T), 800V V(DRM), 800V V(RRM), 1 E
N170CH08GOO	IXYS	获取价格	Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 800V V(DRM), 800V V(RRM), 1 E
N170CH08KOO	IXYS	获取价格	Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 800V V(DRM), 800V V(RRM), 1 E
N170CH10	IXYS	获取价格	Silicon Controlled Rectifier, 533.8A I(T)RMS, 138000mA I(T), 1000V V(DRM), 1000V V(RRM), 1
N170CH10GOO	IXYS	获取价格	Silicon Controlled Rectifier, 533.8A I(T)RMS, 575000mA I(T), 1000V V(DRM), 1000V V(RRM), 1

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