Datasheet > N16T1630C1CZ-60I

N16T1630C1CZ-60I

更新时间： 2024-11-26 19:52:59

品牌	Logo	应用领域
NANOAMP		动态存储器
页数	文件大小	规格书
15页	337K
描述
DRAM

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

N16T1630C1CZ-60I 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

N16T1630C1CZ-60I 数据手册

NanoAmp Solutions, Inc.

670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com

N16T1630C1C

Advance Information

16Mb Ultra-Low Power Asynchronous CMOS PSRAM

1M x 16 bit

Overview

Features

The N16T1630C1C is an integrated memory

device containing a 16 Mbit Pseudo Static Random

Access Memory using a self-refresh DRAM array

organized as 1,048,576 words by 16 bits. It is

designed to be identical in operation and interface

to standard 6T SRAMS. The device is designed for

low standby and operating current and includes a

power-down feature to automatically enter standby

mode. Also included are several other power

saving modes: a deep sleep mode where data is

not retained in the array and partial array refresh

mode where data is retained in a portion of the

array. Both these modes reduce standby current

drain. The device can operate over a very wide

• Dual voltage for Optimum Performance:

Vccq - 2.7V to 3.3V

Vcc - 2.7V to 3.3V

• Fast Cycle Times

< 60 nS

ACC

• Very low standby current

< 120µA

• Very low operating current

Icc < 25mA

• Dual rail operation

and V

for separate I/O power rail

SSQ

CCQ

temperature range of -25 C to +85 C.

Product Family

Standby

Operating

Current (Icc),

Max

Package

Type

Operating

Power

Supply

Current (I_SB),

Part Number

Speed

Temperature

Max

70ns

65ns

60ns

-25^oC to +85^oC

N16T1630C1CZ

48BGA

2.7V - 3.3V

120 µA

3 mA @ 1MHz

Pin Descriptions

Pin Configuration

A₀

A₃

A₂

Pin Name

Pin Function

A₁

A₄

A₆

A₇

A -A

Address Inputs

I/O₈

I/O₀

Write Enable Input

Chip Enable Input

I/O₉I/O₁₀A₅

V_SSQI/O₁₁A₁₇

V_CCQI/O₁₂NC

I/O₁₄I/O₁₃A₁₄

I/O₁I/O₂

I/O₃V_CC

Deep Sleep Input

A₁₆I/O₄V_SS

A₁₅I/O₅I/O₆

Output Enable Input

Lower Byte Enable Input

Upper Byte Enable Input

Data Inputs/Outputs

I/O₁₅A₁₉

A₁₈A₈

A₁₂

A₉

A₁₃

A₁₀

I/O₇

A₁₁

I/O -I/O

48 Pin BGA (top)

6 x 8 mm

Power

Ground

Power I/O only

Ground I/O only

CCQ

SSQ

Stock No. 23339 A 3/04

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

12 3 4 5 6 7...15

中文翻译

下载PDF

与N16T1630C1CZ-60I相关器件

型号	品牌	获取价格	描述	数据表
N16T1630C1CZ-70I	NANOAMP	获取价格	DRAM
N16T1630C2B	NANOAMP	获取价格	16Mb Ultra-Low Power Asynchronous CMOS SRAM
N16T1630C2BZ	NANOAMP	获取价格	16Mb Ultra-Low Power Asynchronous CMOS SRAM
N16T1630C2BZ2	NANOAMP	获取价格	16Mb Ultra-Low Power Asynchronous CMOS SRAM
N16T1630C2BZ2-55	NANOAMP	获取价格	16Mb Ultra-Low Power Asynchronous CMOS SRAM
N16T1630C2BZ2-70	NANOAMP	获取价格	16Mb Ultra-Low Power Asynchronous CMOS SRAM
N16T1630C2BZ2-70I	NANOAMP	获取价格	暂无描述
N16T1630C2BZ-55	NANOAMP	获取价格	16Mb Ultra-Low Power Asynchronous CMOS SRAM
N16T1630C2BZ-55I	NANOAMP	获取价格	Standard SRAM, 1MX16, 55ns, CMOS, PBGA48
N16T1630C2BZ-70	NANOAMP	获取价格	16Mb Ultra-Low Power Asynchronous CMOS SRAM

与N16T1630C1CZ-60I相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

N16T1630C1CZ-60I

N16T1630C1CZ-60I 技术参数

N16T1630C1CZ-60I 数据手册

与N16T1630C1CZ-60I相关器件

与N16T1630C1CZ-60I相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

N16T1630C1CZ-60I

N16T1630C1CZ-60I 技术参数

N16T1630C1CZ-60I 数据手册

与N16T1630C1CZ-60I相关器件

与N16T1630C1CZ-60I相关文章

您还可以找

您在本页遇到什么问题？