Datasheet > N16D1618LPAZ2-80I

N16D1618LPAZ2-80I

更新时间： 2024-11-26 21:16:03

品牌	Logo	应用领域
NANOAMP		动态存储器
页数	文件大小	规格书
26页	582K
描述
DRAM

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

N16D1618LPAZ2-80I 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

N16D1618LPAZ2-80I 数据手册

浏览型号N16D1618LPAZ2-80I的Datasheet PDF文件第2页

浏览型号N16D1618LPAZ2-80I的Datasheet PDF文件第3页

浏览型号N16D1618LPAZ2-80I的Datasheet PDF文件第4页

浏览型号N16D1618LPAZ2-80I的Datasheet PDF文件第5页

浏览型号N16D1618LPAZ2-80I的Datasheet PDF文件第6页

浏览型号N16D1618LPAZ2-80I的Datasheet PDF文件第7页

NanoAmp Solutions, Inc.

N16D1618LPA

670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com

Advance Information

512K × 16 Bits × 2 Banks Low Power Synchronous DRAM

DESCRIPTION

These N16D1618LPA are low power 16,777,216 bits CMOS Synchronous DRAM organized as 2 banks of 524,288

words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the

clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally

pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.

Features

• JEDEC standard 1.8V power supply.

• Auto refresh and self refresh.

• All pins are compatible with LVTTL interface.

• 4K refresh cycle / 64ms.

• Programmable Burst Length and Burst Type.

- 1, 2, 4, 8 or Full Page for Sequential Burst.

- 4 or 8 for Interleave Burst.

• All inputs and outputs referenced to the positive

edge of the system clock.

• Data mask function by DQM.

• Internal dual banks operation.

• Burst Read Single Write operation.

• Special Function Support.

-PASR (Partial Array Self Refresh)

-Auto TCSR(Temperature Compensated Self Refresh)

• Programmable CAS Latency : 2,3 clocks.

• Automatic precharge, includes CONCURRENT

• Programmable Driver Strength Control.

Auto Precharge Mode and controlled Precharge

- Full Strength or 1/2, 1/4 of Full Strength

• Deep Power Down Mode

Table 1: Ordering Information

PART NO.

CLOCK Freq.

Temperature

VDD/VDDQ

INTERLEAVE

PACKAGE

N16D1618LPAZ-80C

N16D1618LPAZ-80I

N16D1618LPAZ2-80C

N16D1618LPAZ2-80I

N16D1618LPAC-60C

N16D1618LPAC-60I

N16D1618LPAC1-60C

N16D1618LPAC1-60I

0 to 70°C

-25 to 85°C

0 to 70°C

-25 to 85°C

0 to 70°C

-25 to 85°C

0 to 70°C

-25 to 85°C

1.8V/1.8V

LVTTL

125MHz

48 FBGA

Green

125MHz

166MHz

60 WBGA

Pb Free

Stock No. 23395- Rev I 5/05

The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.

12 3 4 5 6 7...26

中文翻译

下载PDF

与N16D1618LPAZ2-80I相关器件

型号	品牌	获取价格	描述	数据表
N16D1625LPAC2-10C	ISSI	获取价格	Synchronous DRAM, 1MX16, 8ns, CMOS, PBGA60, GREEN, FBGA-60
N16D1625LPAC2-10I	ISSI	获取价格	Synchronous DRAM, 1MX16, 10ns, CMOS, PBGA60, GREEN, FBGA-60
N16D1625LPAC2-75C	ISSI	获取价格	Synchronous DRAM, 1MX16, 6ns, CMOS, PBGA60, GREEN, FBGA-60
N16D1625LPAT2-10C	ISSI	获取价格	DRAM,
N16D1625LPAT2-10I	ISSI	获取价格	Synchronous DRAM, 1MX16, 10ns, CMOS, PDSO50, GREEN, TSOP2-50
N16D1625LPAT2-10I	NANOAMP	获取价格	DRAM,
N16D1625LPAT2-60C	ISSI	获取价格	Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50, GREEN, TSOP2-50
N16D1625LPAT2-75C	ISSI	获取价格	Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, GREEN, TSOP2-50
N16D1625LPAT2-75I	NANOAMP	获取价格	DRAM,
N16D1625LPAT2-75I	ISSI	获取价格	Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, GREEN, TSOP2-50

与N16D1618LPAZ2-80I相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

44
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

58

产品中心

服务支持

精选活动

关于我们

帮助中心

N16D1618LPAZ2-80I

N16D1618LPAZ2-80I 技术参数

N16D1618LPAZ2-80I 数据手册

与N16D1618LPAZ2-80I相关器件

与N16D1618LPAZ2-80I相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

N16D1618LPAZ2-80I

N16D1618LPAZ2-80I 技术参数

N16D1618LPAZ2-80I 数据手册

与N16D1618LPAZ2-80I相关器件

与N16D1618LPAZ2-80I相关文章

您还可以找

您在本页遇到什么问题？