Datasheet > N1479NS240

N1479NS240

更新时间： 2024-11-25 19:48:19

品牌	Logo	应用领域
IXYS		栅栅极
页数	文件大小	规格书
10页	223K
描述
Silicon Controlled Rectifier, 2830A I(T)RMS, 2400V V(DRM), 2400V V(RRM), 1 Element, 101A337, 4 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

N1479NS240 数据手册

Date:- 30 Jan, 2002

Data Sheet Issue:- 2

WESTCODE

Phase Control Thyristor

Types N1479NS240 to N1479NS300

Absolute Maximum Ratings

MAXIMUM

LIMITS

2400-3000

2500-3100

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current. T_sink=55°C, (note 2)

Mean on-state current. T_sink=85°C, (note 2)

Mean on-state current. T_sink=85°C, (note 3)

Nominal RMS on-state current. T_sink=25°C, (note 2)

D.C. on-state current. T_sink=25°C, (note 4)

1436

989

602

2830

2466

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM, (note 5)

A²s

A/µs

≤

Peak non-repetitive surge t_p=10ms, V_RM10V, (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM, (note 5)

2.21×10⁶

2.65×10⁶

200

I²t

≤

I²t capacity for fusing t_p=10ms, V_RM10V, (note 5)

Maximum rate of rise of on-state current (repetitive), (Note 6)

Maximum rate of rise of on-state current (non-repetitive), (Note 6)

Peak reverse gate voltage

di_T/dt

400

V_RGM

P_G(AV)

P_GM

V_GD

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage, (Note 7)

Operating temperature range

0.25

T_HS

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes: -

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

≤

6) V_D=67% V_DRM, I_TM=3000A, I_FG=2A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Types N1479NS240 to N1479NS300 Issue 2.

Page 1 of 10

January, 2002

12 3 4 5 6 7...10

中文翻译

下载PDF

与N1479NS240相关器件

型号	品牌	获取价格	描述	数据表
N1479NS240-300	IXYS	获取价格	Silicon Controlled Rectifier, 2901 A, 3000 V, SCR
N1479NS300	IXYS	获取价格	Silicon Controlled Rectifier, 2830A I(T)RMS, 3000V V(DRM), 3000V V(RRM), 1 Element, 101A33
N1483CH36GOO	IXYS	获取价格	Silicon Controlled Rectifier, 5338A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element, 101A32
N1483CH36HOO	IXYS	获取价格	Silicon Controlled Rectifier, 5338A I(T)RMS, 3600V V(DRM), 3600V V(RRM), 1 Element, 101A32
N1483CH37GOO	IXYS	获取价格	Silicon Controlled Rectifier, 6650 A, 3700 V, SCR, 101A322, 3 PIN
N1483CH37JOO	IXYS	获取价格	Silicon Controlled Rectifier, 6650A I(T)RMS, 3700V V(DRM), 3700V V(RRM), 1 Element, 101A32
N1483CH37KOO	IXYS	获取价格	Silicon Controlled Rectifier, 6650A I(T)RMS, 3700V V(DRM), 3700V V(RRM), 1 Element, 101A32
N1483CH38	IXYS	获取价格	Silicon Controlled Rectifier, 5338A I(T)RMS, 3800V V(DRM), 3800V V(RRM), 1 Element, 101A32
N1483CH39HOO	IXYS	获取价格	Silicon Controlled Rectifier, 6650 A, 3900 V, SCR, 101A322, 3 PIN
N1483CH39KOO	IXYS	获取价格	Silicon Controlled Rectifier, 6650A I(T)RMS, 3900V V(DRM), 3900V V(RRM), 1 Element, 101A32

与N1479NS240相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

N1479NS240

N1479NS240 数据手册

与N1479NS240相关器件

与N1479NS240相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

N1479NS240

N1479NS240 数据手册

与N1479NS240相关器件

与N1479NS240相关文章

您还可以找

您在本页遇到什么问题？