Datasheet > N1063CH57GOO

N1063CH57GOO

更新时间： 2024-11-10 09:17:35

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
8页	87K
描述
Silicon Controlled Rectifier, 3930 A, 5700 V, SCR, 101A325, 3 PIN

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N1063CH57GOO 数据手册

Date : Dec-99

Rat Rep : 99T01

Issue 2

WESTCODE

Converter thyristor

Type N1063xx53xxx to N1063xx65xxx

Absolute maximum ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1).

Non-repetitive peak off-state voltage, (note 1).

Repetitive peak reverse voltage, (note 1).

Non-repetitive peak reverse voltage, (note 1).

5300-6500

5400-6600

MAXIMUM

LIMITS

RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, Tsink=55°C, (note 2).

Mean on-state current. Tsink=85°C, (note 5).

Mean on-state current. Tsink=85°C, (note 3).

Nominal RMS on-state current, 25°C, (note 2).

D.C. on-state current, 25°C, (note 7).

2010

1400

870

3930

3500

Peak non-repetitive surge tp=10ms, V_RM=0.6V_RRM, (note 4).

Peak non-repetitive surge tp=10ms, V_RM≤10V, (note 4).

I²t capacity for fusing tp=10ms, V_RM=0.4V_RRM, (note 4).

I²t capacity for fusing tp=10ms, V_RM≤10V, (note 4).

I²t capacity for fusing tp=3ms, V_RM≤0.4V_RRM, (note 4).

Critical rate of rise of on-state current (continuous), (note 6).

Critical rate of rise of on-state current (intermittent), (note 6).

Peak forward gate current.

25.2x10³

28x10³

3.2x10⁶

3.9x10⁶

2.6x10⁶

150

A²s

A/µs

I²t

di/dt

300

I_FGM

V_RGM

P_G(AV)

P_GM

V_GD

Peak reverse gate voltage.

Mean forward gate power.

Peak forward gate power.

Non-trigger gate voltage, (Note 5).

0.25

T_HS

Operating temperature range.

-40 to +115

-40 to +150

°C

T_stg

Storage temperature range.

Notes:-

1) De-rating factor of 0.13% per K is applicable for T_jbelow 25°C.

2) Doubleside cooled, single phase; 50Hz, 180° half-sinewave.

3) Singleside cooled, single phase; 50Hz, 180° half-sinewave.

4) Half-sinewave, 115°C T_jinitial.

5) Rated V_DRM.

6) V_D=67%V_DRM, I_T=4000A, I_FG=2A, t_r=500ns.

7) Doubleside cooled.

Types N1063xx53xxx to N1063xx65xxx Rat. Rep. 99T01

page 1 of 8

December, 1999

12 3 4 5 6 7 8

中文翻译

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与N1063CH57GOO相关器件

型号	品牌	获取价格	描述	数据表
N1063CH57JOO	IXYS	获取价格	Silicon Controlled Rectifier, 3930A I(T)RMS, 5700V V(DRM), 5700V V(RRM), 1 Element, 101A32
N1063CH57KOO	IXYS	获取价格	Silicon Controlled Rectifier, 3930A I(T)RMS, 5700V V(DRM), 5700V V(RRM), 1 Element, 101A32
N1063CH59	IXYS	获取价格	Silicon Controlled Rectifier, 3930A I(T)RMS, 5900V V(DRM), 5900V V(RRM), 1 Element, 101A32
N1063CH59GOO	IXYS	获取价格	Silicon Controlled Rectifier, 3930A I(T)RMS, 5900V V(DRM), 5900V V(RRM), 1 Element, 101A32
N1063CH59LOO	IXYS	获取价格	Silicon Controlled Rectifier, 3930A I(T)RMS, 5900V V(DRM), 5900V V(RRM), 1 Element, 101A32
N1063CH60GOO	IXYS	获取价格	Silicon Controlled Rectifier, 3155.7A I(T)RMS, 6000V V(DRM), 6000V V(RRM), 1 Element
N1063CH60JOO	IXYS	获取价格	Silicon Controlled Rectifier, 3155.7A I(T)RMS, 6000V V(DRM), 6000V V(RRM), 1 Element
N1063CH61	IXYS	获取价格	Silicon Controlled Rectifier, 3930 A, 6100 V, SCR, 101A325, 3 PIN
N1063CH61GOO	IXYS	获取价格	Silicon Controlled Rectifier, 3930A I(T)RMS, 6100V V(DRM), 6100V V(RRM), 1 Element, 101A32
N1063CH61HOO	IXYS	获取价格	Silicon Controlled Rectifier, 3930A I(T)RMS, 6100V V(DRM), 6100V V(RRM), 1 Element, 101A32

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