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N08T1630C1BT-55I

更新时间： 2024-11-27 20:52:47
品牌 Logo 应用领域
NANOAMP 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 175K
描述
Standard SRAM, 512KX16, 55ns, CMOS, PDSO44

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N08T1630C1BT-55I 技术参数

是否Rohs认证： 不符合生命周期：Contact Manufacturer
包装说明：TSOP, TSOP44,.46,32Reach Compliance Code：unknown
风险等级：5.88最长访问时间：55 ns
I/O 类型：COMMONJESD-30 代码：R-PDSO-G44
内存密度：8388608 bit内存集成电路类型：STANDARD SRAM
内存宽度：16端子数量：44
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX16
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：TSOP封装等效代码：TSOP44,.46,32
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, THIN PROFILE
并行/串行：PARALLEL电源：3/3.3 V
认证状态：Not Qualified最大待机电流：0.00007 A
最小待机电流：2.7 V子类别：SRAMs
最大压摆率：0.025 mA表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子形式：GULL WING端子节距：0.8 mm
端子位置：DUALBase Number Matches：1

N08T1630C1BT-55I 数据手册

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NanoAmp Solutions, Inc.  
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035  
ph: 408-935-7777, FAX: 408-935-7770  
www.nanoamp.com  
N08T1630CxB  
8Mb Ultra-Low Power Asynchronous CMOS SRAM  
512Kx16 bit  
Overview  
Features  
The N08T1630CxB is an integrated memory  
device containing a low power 8 Mbit SRAM built  
using a self-refresh DRAM array organized as  
512,288 words by 16 bits. It is designed to be  
identical in operation and interface to standard 6T  
SRAMS. The device is designed for low standby  
and operating current and includes a power-down  
feature to automatically enter standby mode. The  
device operates with two chip enable (CE1 and  
CE2) controls and output enable (OE) to allow for  
easy memory expansion. Byte controls (UB and  
LB) allow the upper and lower bytes to be  
• Single Wide Power Supply Range  
2.7 to 3.6 Volts  
• Very low standby current  
70µA at 3.0V (Max)  
• Very low operating current  
2.0mA at 3.0V and 1µs (Typical)  
• Simple memory control  
Dual Chip Enables (CE1 and CE2)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
accessed independently and can also be used to  
deselect the device. The N08T1630CxB is optimal  
for various applications where low-power is critical  
such as battery backup and hand-held devices.  
The device can operate over a very wide  
• Very fast access time  
55ns address access option  
30ns OE access time  
• Automatic power down to standby mode  
• TTL compatible three-state output driver  
• Green package option for TSOP and BGA  
o
o
temperature range of -40 C to +85 C and is  
available in JEDEC standard BGA and TSOP2  
packages compatible with other standard 512Kb x  
16 SRAMs.  
Product Family  
Standby  
Operating  
Current (Icc),  
Max  
Operating  
Power  
Current (ISB),  
Part Number  
Package Type  
Speed  
Temperature  
Supply (Vcc)  
Max @ 3.0V  
N08T1630C2BZ  
N08T1630C2BZ2  
N08T1630C1BT  
48 - BGA  
Green 48 - BGA  
44- TSOP2  
55/70ns @  
2.7V  
-40oC to +85oC  
2.7V - 3.6V  
70 µA  
3 mA @ 1MHz  
N08T1630C1BT2 Green 44- TSOP2  
Pin Configuration (Top View)  
Pin Descriptions  
1
2
3
A0  
A3  
4
A1  
A4  
5
A2  
6
Pin Name  
A0-A18  
WE  
CE1  
CE2  
OE  
LB  
UB  
I/O0-I/O15  
Pin Function  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A4  
1
A5  
LB  
OE  
CE2  
A
B
C
D
E
F
Address Inputs  
Write Enable Input  
Chip Enable 1 Input  
A3  
2
A6  
A2  
3
A7  
I/O8  
I/O0  
UB  
CE1  
A1  
4
OE  
A0  
5
UB  
CE  
6
LB  
I/O9 I/O10 A5  
VSS I/O11 A17  
A6  
A7  
I/O1 I/O2  
I/O3 VCC  
I/O0  
I/O1  
I/O2  
I/O3  
VCC  
VSS  
I/O4  
I/O5  
I/O6  
I/O7  
WE  
A18  
A17  
A16  
A15  
A14  
7
I/O15  
I/O14  
I/O13  
I/O12  
VSS  
VCC  
I/O11  
I/O10  
I/O9  
I/O8  
A8  
Chip Enable 2 Input (BGA only)  
Output Enable Input  
8
44 Pin  
9
TSOP2  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
VCC I/O12 VSS A16 I/O4 VSS  
I/O14 I/O13 A14 A15 I/O5 I/O6  
Lower Byte Enable Input  
Upper Byte Enable Input  
Data Inputs/Outputs  
I/O15  
A18  
A12  
A9  
A13  
A10  
I/O7  
NC  
NC  
A8  
WE  
A11  
G
H
VCC  
VSS  
NC  
Power  
Ground  
Not Connected  
A9  
A10  
A11  
48 Ball BGA  
6 x 8 mm  
A12  
A13  
(DOC# 14-02-004 REV H ECN# 01-1102)  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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