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N08M1618L1AB-150I PDF预览

N08M1618L1AB-150I

更新时间： 2024-02-08 02:31:59
品牌 Logo 应用领域
NANOAMP 静态存储器内存集成电路
页数 文件大小 规格书
11页 269K
描述
Standard SRAM, 512KX16, 150ns, CMOS, PBGA48

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N08M1618L1AB-150I 技术参数

生命周期：Obsolete零件包装代码：BGA
包装说明：TFBGA,针数：48
Reach Compliance Code：compliantECCN代码：3A991.B.2.A
HTS代码：8542.32.00.41风险等级：5.84
最长访问时间：150 nsJESD-30 代码：R-PBGA-B48
长度：10 mm内存密度：8388608 bit
内存集成电路类型：STANDARD SRAM内存宽度：16
功能数量：1端子数量：48
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：85 °C
最低工作温度：-40 °C组织：512KX16
封装主体材料：PLASTIC/EPOXY封装代码：TFBGA
封装形状：RECTANGULAR封装形式：GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：PARALLEL认证状态：Not Qualified
座面最大高度：1.2 mm最大供电电压 (Vsup)：2.2 V
最小供电电压 (Vsup)：1.4 V标称供电电压 (Vsup)：1.8 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：BALL
端子节距：0.75 mm端子位置：BOTTOM
宽度：8 mm

N08M1618L1AB-150I 数据手册

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NanoAmp Solutions, Inc.  
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035  
ph: 408-935-7777, FAX: 408-935-7770  
www.nanoamp.com  
N08M1618L1A  
Advance Information  
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM  
512K × 16 bit  
Overview  
Features  
The N08M1618L1A is an integrated memory  
device intended for non life-support (Class 1 or  
2) medical applications. This device is a 8  
megabit memory organized as 524,288 words by  
16 bits. The device is designed and fabricated  
using NanoAmp’s advanced CMOS technology  
with reliability inhancements for medical users. The  
base design is the same as NanoAmp’s  
• Dual voltage for Optimum Performance:  
Vccq - 2.3 to 3.6 Volts  
Vcc - 1.4 to 2.2 Volts  
• Very low standby current  
0.5µA at 1.8V and 37 deg C  
• Very low operating current  
1.0mA at 1.8V and 1µs (Typical)  
N08M1618L1A, which has further reliability  
processing for life-support (Class 3) medical  
applications. The device operates with two chip  
enable (CE1 and CE2) controls and output enable  
(OE) to allow for easy memory expansion. Byte  
controls (UB and LB) allow the upper and lower  
bytes to be accessed independently and can also  
be used to deselect the device. This device is  
optimal for various applications where low-power is  
critical such as battery backup and hand-held  
devices. The device can operate over a very wide  
• Very low Page Mode operating current  
0.5mA at 1.8V and 1µs (Typical)  
• Simple memory control  
Dual Chip Enables (CE1 and CE2)  
Byte control for independent byte operation  
Output Enable (OE) for memory expansion  
• Low voltage data retention  
Vcc = 1.2V  
• Special Processing to reduce Soft Error Rate  
(SER)  
o
o
temperature range of -40 C to +85 C and is  
• Automatic power down to standby mode  
available in a JEDEC standard BGA package.  
Product Family  
Standby  
Operating  
Current (Icc),  
Max  
Operating  
Power  
Current (ISB),  
Part Number  
Package Type  
Speed  
Temperature  
Supply  
Max  
N08M1618L1AB  
48 - BGA  
2.3V-3.6V(VCCQ  
1.4V-2.2V(VCC) 150ns @ 1.4V  
)
85ns @ 1.7V  
2.5 mA @  
1MHz  
-40oC to +85oC  
20 µA  
N08M1618L1AD Known Good Die  
Pin Configuration  
Pin Descriptions  
1
2
3
A0  
A3  
4
5
A2  
6
Pin Name  
A0-A18  
WE  
CE1, CE2  
OE  
LB  
UB  
I/O0-I/O15  
Pin Function  
A1  
A4  
A6  
A7  
LB  
OE  
CE2  
A
B
C
D
E
F
Address Inputs  
Write Enable Input  
Chip Enable Input  
I/O8  
I/O0  
UB  
CE1  
I/O9 I/O10 A5  
VSS I/O11 A17  
I/O1 I/O2  
I/O3 VCC  
Output Enable Input  
Lower Byte Enable Input  
Upper Byte Enable Input  
Data Inputs/Outputs  
VCCQ I/O12  
I/O14 I/O13 A14  
A16 I/O4 VSS  
A15 I/O5 I/O6  
NC  
I/O15  
A18  
A12  
A9  
A13  
A10  
I/O7  
NC  
NC  
A8  
WE  
A11  
G
H
VCC  
VSS  
Power  
Ground  
48 Pin BGA (top)  
8 x 10 mm  
VCCQ  
NC  
Power I/O pins only  
Not Connected  
Stock No. 23211 3/05  
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.  
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