5秒后页面跳转
N0800S PDF预览

N0800S

更新时间: 2022-03-21 03:28:57
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管
页数 文件大小 规格书
5页 84K
描述
NPN SILICON EPITAXIAL TRANSISTOR

N0800S 数据手册

 浏览型号N0800S的Datasheet PDF文件第2页浏览型号N0800S的Datasheet PDF文件第3页浏览型号N0800S的Datasheet PDF文件第4页浏览型号N0800S的Datasheet PDF文件第5页 
Data Sheet  
N0800S  
NPN SILICON EPITAXIAL TRANSISTOR  
R07DS0727EJ0100  
Rev.1.00  
Mar 30, 2012  
FEATURES  
Complements to N0800R.  
CEO = 80 V  
C(DC) = 0.3 A  
Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM)  
V
I
PRODUCT LINEUP  
Part Number  
Packing  
Tape 3000p/reel  
Package Name  
SOT-23F  
Package Code  
PVSF0003ZA-A  
Mass [TYP.]  
0.0126g  
N0800S-T1-AT  
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse)  
PT1  
Ratings  
Unit  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current (DC)  
Collector Current (pulse) *1  
Total Power Dissipation  
Total Power Dissipation *2  
Junction Temperature  
Storage Temperature  
80  
80  
V
V
5.0  
V
0.3  
A
0.5  
A
0.2  
W
W
C  
C  
PT2  
1.0  
Tj  
150  
Tstg  
55 to 150  
Note *1. PW 10 ms, Duty Cycle 50%  
*2. FR-4 board size 2500 mm2 1.6 mm, t 5 sec  
ELECTRICAL CHARACTERISTICS (Ta = 25C)  
Parameter  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
Symbol  
ICBO  
Condition  
VCB = 80 V, IE = 0  
MIN.  
TYP.  
MAX.  
100  
Unit  
nA  
IEBO  
hFE1  
hFE2  
VEB = 5.0 V, IC = 0  
100  
nA  
1
1
*
*
VCE = 1.0 V, IC = 50 mA  
VCE = 2.0 V, IC = 300 mA  
IC = 300 mA, IB = 30 mA  
IC = 300 mA, IB = 30 mA  
VCE = 6.0 V, IC = 10 mA  
VCE = 6.0 V, IE = -10 mA  
90  
30  
200  
80  
400  
DC Current Gain  
1
VCE(sat)  
*
Collector Saturation Voltage  
Base Saturation Voltage  
Base to Emitter Voltage  
Gain Bandwidth Product  
Output Capacitance  
Note *1. Pulsed  
0.15  
0.86  
645  
100  
6
0.6  
1.2  
V
V
1
VBE(sat)  
*
1
VBE  
fT  
*
600  
700  
mV  
MHz  
pF  
Cob  
VCB = 10 V, IE = 0, f = 1.0 MHz  
hFE Classification  
Marking  
hFE1  
EM  
90 to 180  
EL  
135 to 270  
EK  
200 to 400  
R07DS0727EJ0100 Rev.1.00  
Mar 30, 2012  
Page 1 of 5  

与N0800S相关器件

型号 品牌 描述 获取价格 数据表
N0800S-T1-AT RENESAS NPN SILICON EPITAXIAL TRANSISTOR

获取价格

N0801R RENESAS PNP SILICON EPITAXIAL TRANSISTOR

获取价格

N0801R-T1-AT RENESAS PNP SILICON EPITAXIAL TRANSISTOR

获取价格

N0801S RENESAS NPN SILICON EPITAXIAL TRANSISTOR

获取价格

N0801S-T1-AT RENESAS NPN SILICON EPITAXIAL TRANSISTOR

获取价格

N0805R105KCT ETC Multilayer Ceramic Capacitors

获取价格