Data Sheet
N0501S
NPN SILICON EPITAXIAL TRANSISTOR
R07DS0725EJ0100
Rev.1.00
Mar 30, 2012
FEATURES
Complements to N0501R.
CEO = 50 V
C(DC) = 1.0 A
Miniature package SOT-23F (2SD1615: Package variation of 3pPoMM)
V
I
PRODUCT LINEUP
Part Number
Packing
Tape 3000p/reel
Package Name
SOT-23F
Package Code
PVSF0003ZA-A
Mass [TYP.]
0.0126g
N0501S-T1-AT
ABSOLUTE MAXIMUM RATINGS (Ta = 25C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
PT1
Ratings
Unit
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Collector Current (pulse) *1
Total Power Dissipation
Total Power Dissipation *2
Junction Temperature
Storage Temperature
60
50
V
V
6.0
V
1.0
A
2.0
A
0.2
W
W
C
C
PT2
1.0
Tj
150
Tstg
55 to 150
Note *1. PW 10 ms, Duty Cycle 50%
*2. FR-4 board size 2500 mm2 1.6 mm, t 5 sec
ELECTRICAL CHARACTERISTICS (Ta = 25C)
Parameter
Symbol
ICBO
Condition
VCB = 60 V, IE = 0
MIN.
TYP.
MAX.
100
Unit
nA
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
IEBO
hFE1
hFE2
VEB = 6.0 V, IC = 0
100
nA
1
1
*
*
VCE = 2.0 V, IC = 100 mA
VCE = 2.0 V, IC = 1.0 A
IC = 1.0 A, IB = 50 mA
IC = 1.0 A, IB = 50 mA
VCE = 2.0 V, IC = 50 mA
VCE = 2.0 V, IE = 100 mA
135
81
290
270
0.15
0.9
600
DC Current Gain
1
VCE(sat)
*
Collector Saturation Voltage
Base Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
Note *1. Pulsed
0.3
1.2
V
V
1
VBE(sat)
*
1
VBE
fT
*
600
700
mV
MHz
pF
150
20
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
hFE Classification
Marking
hFE1
GM
GL
200 to 400
GK
135 to 270
300 to 600
R07DS0725EJ0100 Rev.1.00
Mar 30, 2012
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