Datasheet > N04Q1612C2BB2-15C

N04Q1612C2BB2-15C

更新时间： 2024-01-07 00:06:12

品牌	Logo	应用领域
NANOAMP		内存集成电路静态存储器
页数	文件大小	规格书
13页	300K
描述
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY

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N04Q1612C2BB2-15C 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	FBGA, BGA48,6X8,32	Reach Compliance Code：	unknown
风险等级：	5.8	最长访问时间：	150 ns
I/O 类型：	COMMON	JESD-30 代码：	R-PBGA-B48
内存密度：	4194304 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	16	端子数量：	48
字数：	262144 words	字数代码：	256000
工作模式：	ASYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	256KX16
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	FBGA	封装等效代码：	BGA48,6X8,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, FINE PITCH
并行/串行：	PARALLEL	电源：	1.2,1.2/3 V
认证状态：	Not Qualified	最大待机电流：	5e-7 A
最小待机电流：	1.1 V	子类别：	SRAMs
最大压摆率：	0.003 mA	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	Base Number Matches：	1

N04Q1612C2BB2-15C 数据手册

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NanoAmp Solutions, Inc.

670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035

ph: 408-935-7777, FAX: 408-935-7770

www.nanoamp.com

N04Q16yyC2B

Advance Information

4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual

Vcc and VccQ for Ultimate Power Reduction

256K×16 bit POWER SAVER TECHNOLOGY

Overview

Features

The N04Q16yyC2B are ultra-low power memory

devices containing a 4 Mbit Static Random Access

Memory organized as 262,144 words by 16 bits.

The device is designed and fabricated using

NanoAmp’s advanced CMOS technology to

provide ultra-low active and standby power. The

device operates with two chip enable (CE1 and

CE2) controls and output enable (OE) to allow for

easy memory expansion. Byte controls (UB and

LB) allow the upper and lower bytes to be

• Multiple Power Supply Ranges

1.1V - 1.3V

1.65V - 1.95V

2.3V - 2.7V

2.7V - 3.6V

• Dual Vcc / VccQ Power Supplies

1.2V Vcc with 3V VccQ

1.8V Vcc with 3V VccQ

2.5V Vcc with 3V VccQ

• Very low standby current

accessed independently. The 4Mb SRAM is

optimized for the ultimate in low power and is

suited for various applications where ultra-low-

power is critical such as medical applications,

battery backup and power sensitive hand-held

devices. The unique page mode operation saves

active operating power and the dual power supply

rails allow very low voltage operation while

maintaining 3V I/O capability. The device can

50nA typical for 1.2V operation

• Very low operating current

400µA typical for 1.2V operation at 1µs

• Very low Page Mode operating current

80µA typical for 1.2V operation at 1µs

• Simple memory control

Dual Chip Enables (CE1 and CE2)

Byte control for independent byte operation

Output Enable (OE) for memory expansion

operate over a very wide temperature range of 0 C

to +70 C for the lowest power and is also available

• Automatic power down to standby mode

• BGA, TSOP and KGD options

• RoHS Compliant

in the industrial range of -40 C to +85 C. The

devices are available in standard BGA and TSOP

packages. The devices are also available as

Known Good Die (KGD) for embedded package

applications.

Product Options

Typical

Vcc

(V)

VccQ

(V)

Speed

(nS)

Typical

Operating

Part Number

I/O

Standby

Current

Operating Current Temperature

N04Q1612C2Bx-15C

N04Q1618C2Bx-15C

N04Q1618C2Bx-70C

N04Q1625C2Bx-15C

N04Q1630C2Bx-70C

x16

50nA

1.2

1.8

1.2, 1.8, 3 150ns

0.4 mA @ 1MHz

150ns

1.8, 2.5, 3

0^oC to +70^oC

200nA

800nA

70ns

0.6 mA @ 1MHz

2.5

3.0

2.5, 3

3.0

150ns

70ns

0.6 mA @ 1MHz

2.2mA @ 1MHz

Stock No. 23451-B 2/06

The specification is ADVANCE INFORMATION and subject to change without notice.

12 3 4 5 6 7...13

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