Datasheet > MXTA42C-G

MXTA42C-G

更新时间： 2024-02-07 11:48:24

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WEITRON		/
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描述
Transistor

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技术参数
数据手册

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MXTA42C-G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

MXTA42C-G 数据手册

MXTA42

NPN Plastic-Encapsulate Transistor

SOT-89

* “G” Lead(Pb)-Free

1. BASE

2. COLLECTOR

3. EMITTER

( T =25 C unless otherwise noted)

M aximum R atings

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Symbol

Value

Unit

CEO

300

5.0

Vdc

CBO

EBO

mAdc

Collector Current-Continuous

500

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Total Device Dissipation FR-5 Board

500

4.0

mW/ C

(Note 1.)T =25 C

Derate above 25 C

(1)

250

C/W

Thermal Resistance, Junction to Ambient

θJA

-55 to +150

Junction and Storage,Temperature Range

J,Tstg

Device Marking

MXTA42=A42

Characteristics

Collector-Emitter Breakdown Voltage (I = 1.0 mAdc, I =0)

Symbol

Min

Max

Unit

300

Vdc

(BR)CEO

Collector-Base Breakdown Voltage (I = 100 µAdc, I =0)

(BR)CBO

5.0

Emitter-Base Breakdown Voltage (I = 100 µAdc, I =0)

(BR)EBO

Collector Cutoff Current (V = 200 Vdc, I =0)

uAdc

0.25

0.1

CBO

Emitter Cutoff Current (V = 5.0 Vdc, I =0)

EBO

1.FR-5=1.0 x 0.75 x 0.062 in.

WEITR O N

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