MXTA42
NPN Plastic-Encapsulate Transistor
SOT-89
1
2
1. BASE
2. COLLECTOR
3
3. EMITTER
( T =25 C unless otherwise noted)
A
M aximum R atings
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
Value
Unit
V
300
300
5.0
CEO
Vdc
Vdc
Vdc
V
CBO
V
EBO
mAdc
Collector Current-Continuous
I
500
C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Total Device Dissipation FR-5 Board
P
D
500
4.0
mW
mW/ C
(Note 1.)T =25 C
A
Derate above 25 C
(1)
R
250
C/W
Thermal Resistance, Junction to Ambient
θJA
T
-55 to +150
Junction and Storage,Temperature Range
J,Tstg
C
Device Marking
MXTA42=A42
Characteristics
Collector-Emitter Breakdown Voltage (I = 1.0 mAdc, I =0)
Symbol
Min
Max
Unit
-
V
V
300
300
Vdc
Vdc
Vdc
C
B
(BR)CEO
-
-
Collector-Base Breakdown Voltage (I = 100 µAdc, I =0)
C
E
(BR)CBO
V
5.0
Emitter-Base Breakdown Voltage (I = 100 µAdc, I =0)
(BR)EBO
E
C
-
-
Collector Cutoff Current (V = 200 Vdc, I =0)
I
uAdc
uAdc
CB
0.25
0.1
E
CBO
I
Emitter Cutoff Current (V = 5.0 Vdc, I =0)
EB
EBO
C
1.FR-5=1.0 x 0.75 x 0.062 in.
WEITR O N
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