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MXRT100KP54A/TR PDF预览

MXRT100KP54A/TR

更新时间： 2024-11-27 10:15:23
品牌 Logo 应用领域
美高森美 - MICROSEMI 二极管瞬态抑制器
页数 文件大小 规格书
5页 260K
描述
Trans Voltage Suppressor Diode, 100000W, 54V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 5A, 2 PIN

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MXRT100KP54A/TR 数据手册

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TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
Unidirectional and Bidirectional  
Transient Voltage Suppressor  
- Economical series for thru hole mounting  
- Unidirectional (A) and Bidirectional (CA) construction  
- Selections for 40 to 400 V standoff voltages (VWM)  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MRT100KP40A thru MRT100KP400CA, e3  
FEATURES  
.
.
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Suppresses transients up to 100 kW @ 6.4/69 µs  
Fast response with less than 5ns turn-on time  
Preferred 100kW TVS for aircraft power bus protection  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes  
specify various screening and conformance inspection options based on MIL-PRF-19500.  
Refer to MicroNote 129 for more details on the screening options.  
.
.
.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS Compliant devices available by adding “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
CASE 5A  
APPLICATIONS / BENEFITS  
.
Protection from high power switching transients, induced RF, and lightning threats with  
comparatively small package size (0.25 inch diameter)  
.
.
Protection from ESD and EFT per IEC61000-4-2 and IEC61000-4-4  
Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 4 (6.4/69 µs) on all  
devices  
.
.
.
.
Pin injection protection per RTCA/DO-160E up to Level 5 for Waveform 4 (6.4/69 µs) on device  
types MRT100KP33A or CA up to MRT100KP260A or CA  
Pin injection protection per RTCA/DO-160E up to Level 3 for Waveform 5A (40/120 µs) on all  
devices  
Pin injection protection per RTCA/DO-160E up to Level 4 for Waveform 5A (40/120 µs) on  
device types MRT100KP33A or CA up to MRT100KP64A or CA  
Consult Factory for other voltages with similar Peak Pulse Power capabilities  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 ºC: 100 kW at @ 6.4/69 µs in Figure 8 (also see Figures 1  
and 2)  
impulse repetition rate (duty factor) of 0.005 %  
.
.
.
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65 ºC to +150 °C  
Thermal Resistance: 17.5 °C/W junction to lead, or 77.5 °C/W junction to ambient when  
mounted on FR4 PC board with 4 mm2 copper pads (1 oz ) and track width 1 mm, length 25  
mm  
.
Steady-state power dissipation: 7 Watts @ TL = 27.5 °C or 1.61 Watts at TA = 25 °C when  
mounted on FR4 PC Board described above for thermal resistance  
.
.
Forward surge: 250 Amps 8.3 ms half-sine wave for unidirectional devices only  
Solder temperatures: 260 °C for 10 s (maximum)  
RF01012 Rev A, August 2010  
High Reliability Product Group  
Page 1 of 5  
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 		Trans Voltage Suppressor Diode, 100000W, 54V V(RWM), Bidirectional, 1 Element, Silicon, PL
MXRT100KP54CAE3/TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 54V V(RWM), Bidirectional, 1 Element, Silicon, RO
MXRT100KP54CAE3TR MICROSEMI

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 		100000W, BIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-2
MXRT100KP54CATRE3 MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 54V V(RWM), Bidirectional, 1 Element, Silicon, RO
MXRT100KP54CE3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 54V V(RWM), Bidirectional, 1 Element, Silicon, RO
MXRT100KP54E3TR MICROSEMI

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 		Trans Voltage Suppressor Diode, 100000W, 54V V(RWM), Unidirectional, 1 Element, Silicon, R

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