5秒后页面跳转
捷配首页

Datasheet > MXPLAD30KP58CE3TR
MXPLAD30KP58CE3TR PDF预览

MXPLAD30KP58CE3TR

更新时间： 2024-11-26 19:46:39
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
5页 268K
描述
Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1

阅读下载

中文翻译

获取价格

MXPLAD30KP58CE3TR 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-1针数：1
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.77
最大击穿电压：78.7 V最小击穿电压：64.4 V
配置：SINGLE二极管元件材料：SILICON
二极管类型：TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码：S-PSSO-G1
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值反向功率耗散：30000 W元件数量：1
端子数量：1封装主体材料：PLASTIC/EPOXY
封装形状：SQUARE封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：BIDIRECTIONAL
最大功率耗散：2.5 W认证状态：Not Qualified
最大重复峰值反向电压：58 V表面贴装：YES
技术：AVALANCHE端子面层：MATTE TIN
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

MXPLAD30KP58CE3TR 数据手册

 浏览型号MXPLAD30KP58CE3TR的Datasheet PDF文件第2页浏览型号MXPLAD30KP58CE3TR的Datasheet PDF文件第3页浏览型号MXPLAD30KP58CE3TR的Datasheet PDF文件第4页浏览型号MXPLAD30KP58CE3TR的Datasheet PDF文件第5页 
PLAD30KP10 thru PLAD30KP400CA, e3  
30kW Surface Mount Transient  
Voltage Suppressor  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
These Microsemi 30 kW Transient Voltage Suppressors (TVSs)  
are designed for applications requiring protection of voltage-  
sensitive electronic devices that may be damaged by harsh or  
severe voltage transients including lightning per IEC61000-4-5  
and class levels with various source impedances described  
herein. This series is available in 10 to 400 volt Standoff  
Voltages (VWM) in both unidirectional and bi-directional with either  
5% or 10% tolerances of the Breakdown Voltage (VBR).  
Microsemi also offers numerous other TVS products to meet  
higher or lower power demands and special applications.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
•
•
Protection from switching transients and induced RF  
•
Available in both Unidirectional and Bidirectional  
construction (Bidirectional with C or CA suffix)  
Protection from ESD, and EFT per IEC 61000-4-2 and  
IEC 61000-4-4  
•
•
Selections for 10 to 400 volt Standoff Voltages VWM  
•
Secondary lightning protection per IEC61000-4-5 with  
42 Ohms source impedance:  
Suppresses transients up to 30 kW @ 10/1000 µs and 200  
kW @ 8/20 µs (see Figure 1)  
Class 1,2,3,4: PLAD30KP10 - PLAD30KP400A or CA  
•
•
Fast response  
Class 5: PLAD30KP10 - PLAD30KP400A or CA (short  
distance)  
Optional 100% screening for avionics grade is available  
by adding MA prefix to part number for added 100%  
temperature cycle -55oC to +125oC (10X) as well as surge  
(3X) and 24 hours HTRB with post test VZ & IR (in the  
operating direction for unidirectional or both directions for  
bidirectional)  
Class 5: PLAD30KP10 - PLAD30KP220A or CA (long  
distance)  
•
•
Secondary lightning protection per IEC61000-4-5 with  
12 Ohms source impedance:  
Class 1,2, 3: PLAD30KP10 to PLAD30KP400A or CA  
Class 4: PLAD30KP10 to PLAD30KP220A or CA  
•
Options for screening in accordance with MIL-PRF-19500  
for JAN, JANTX, and JANTXV are available by adding MQ,  
MX, or MV prefixes respectively to part numbers.  
Secondary lightning protection per IEC61000-4-5 with 2  
Ohms source impedance:  
Class 2: PLAD30KP10 to PLAD30KP400A or CA  
Class 3: PLAD30KP10 to PLAD30KP220A or CA  
Class 4: PLAD30KP10 to PLAD30KP110A or CA  
•
Moisture classification is Level 1 with no dry pack required  
per IPC/JEDEC J-STD-020B  
•
RoHS Compliant devices available by adding an “e3” suffix  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
•
Peak Pulse Power dissipation at 25ºC: 30,000 watts at  
•
•
CASE: Void-free transfer molded thermosetting  
epoxy body meeting UL94V-0  
10/1000 μs (also see Figures 1 and 2)  
•
•
Impulse repetition rate (duty factor): 0.05%  
FINISH: Tin-Lead or RoHS Compliant annealed  
matte-Tin plating readily solderable per MIL-  
STD-750, method 2026  
t
clamping (0 volts to V(BR) min.): < 100 ps theoretical for  
unidirectional and < 5 ns for bidirectional  
Operating & Storage temperature: -65ºC to +150ºC  
Thermal resistance: 0.5ºC/W junction to case, or 50ºC/W  
junction to ambient when mounted on FR4 PC board with  
recommended mounting pad with 1 oz Cu (see last page)  
•
•
MARKING: Body marked with part number  
•
•
POLARITY: For unidirectional devices, the  
cathode is on the metal backside (package  
bottom)  
Steady-State Power dissipation: 250 watts at Tc = 25oC,  
or 2.5 watts at TA = 25ºC when mounted on FR4 PC  
board as described for thermal resistance above  
•
•
WEIGHT: 1.7-2.0 grams (approximate)  
•
TAPE & REEL option: Standard per EIA-296  
for axial package (add “TR” suffix to part  
number)  
•
•
Forward Surge: 1500 Amps (theoretical) at 8.3 ms half-  
sine wave for unidirectional devices only  
Solder temperatures: 260 ºC for 10 s (maximum)  
•
See package dimension on last page  
Copyright © 2007  
9-12-2007 Rev G  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  
12345

中文翻译

下载PDF

与MXPLAD30KP58CE3TR相关器件

型号 品牌 获取价格 描述 数据表
MXPLAD30KP58CTR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MXPLAD30KP58TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 58V V(RWM), Unidirectional, 1 Element, Silicon, PL
MXPLAD30KP60A/TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 60V V(RWM), Unidirectional, 1 Element, Silicon
MXPLAD30KP60AE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, RO
MXPLAD30KP60AE3/TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 60V V(RWM), Unidirectional, 1 Element, Silicon, RO
MXPLAD30KP60AE3TR MICROSEMI

获取价格

 		30000W, UNIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-1
MXPLAD30KP60ATR MICROSEMI

获取价格

 		30000W, UNIDIRECTIONAL, SILICON, TVS DIODE, PLASTIC PACKAGE-1
MXPLAD30KP60CA MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 60V V(RWM), Bidirectional, 1 Element, Silicon, PLA
MXPLAD30KP60CA/TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 60V V(RWM), Bidirectional, 1 Element, Silicon
MXPLAD30KP60CAE3/TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 30000W, 60V V(RWM), Bidirectional, 1 Element, Silicon, ROH

与MXPLAD30KP58CE3TR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证