Datasheet > MXLSMBJ36AE3TR

MXLSMBJ36AE3TR

更新时间： 2024-11-21 06:03:39

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网光电二极管电视
页数	文件大小	规格书
4页	161K
描述
600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN

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技术参数
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MXLSMBJ36AE3TR 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DO-214AA
包装说明：	R-PDSO-C2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.51
其他特性：	HIGH RELIABILITY	最大击穿电压：	44.2 V
最小击穿电压：	40 V	击穿电压标称值：	42.1 V
最大钳位电压：	58.1 V	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：	DO-214AA	JESD-30 代码：	R-PDSO-C2
JESD-609代码：	e3	湿度敏感等级：	1
最大非重复峰值反向功率耗散：	600 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1.38 W	认证状态：	Not Qualified
最大重复峰值反向电压：	36 V	子类别：	Transient Suppressors
表面贴装：	YES	技术：	AVALANCHE
端子面层：	Matte Tin (Sn) - annealed	端子形式：	C BEND
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

MXLSMBJ36AE3TR 数据手册

TECHNICAL DATA SHEET

Gort Road Business Park, Ennis, Co. Clare, Ireland.

Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298

6 Lake Street, Lawrence, MA 01841

Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803

Website: http://www.microsemi.com

- High Reliability controlled devices

SURFACE MOUNT 600 W

Transient Voltage Suppressor

- Unidirectional (A) and Bidirectional (CA) construction

- Available in both J-bend and Gull-wing terminations

- Selections for 5.0 to 170 V standoff voltages (V_WM

)

LEVELS

M, MA, MX, MXL

DEVICES

MSMBJ5.0A thru MSMBJ170CA, e3

and MSMBG5.0A thru MSMBG170CA, e3

FEATURES

High reliability controlled devices with wafer fabrication and assembly lot traceability

100 % surge tested devices

Optional up screening available by replacing the M prefix with MA, MX or MXL. These

prefixes specify various screening and conformance inspection options based on

MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options.

Axial-leaded equivalent packages for through-hole mounting available as MP6KE6.8A to

MP6KE200CA

Refer to table below

for dimensions

Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B

RoHS compliant devices available by adding an “e3” suffix

3σ lot norm screening performed on Standby Current I_D

APPLICATIONS / BENEFITS

Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T²L, etc.

Protection from switching transients & induced RF

Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4

Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:

Class 1: MSMB5.0A to MSMB120CA

Class 2: MSMB5.0A to MSMB60CA

Class 3: MSMB5.0A to MSMB30CA

Class 4: MSMB5.0A to MSMB15CA

Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:

Class 1: MSMB5.0A to MSMB36CA

Class 2: MSMB5.0A to MSMB18CA

MAXIMUM RATINGS

Peak Pulse Power dissipation at 25 ºC: 600 watts at 10/1000 μs (also see Figures 1, 2, and

3) with impulse repetition rate (duty factor) of 0.01 % or less

t_clamping(0 volts to V_BRmin.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional

Operating and Storage temperature: -65 °C to +150 °C

Thermal resistance: 25 °C/W junction to lead, or 90 °C/W junction to ambient when mounted

on FR4 PC board (1oz Cu) with recommended footprint (see page 2)

Steady-State Power dissipation: 5 watts at TL = 25 ºC, or 1.38 watts at TA = 25 ºC when

mounted on FR4 PC board with recommended footprint (see page 2)

Forward Surge at 25 ºC: 100 Amp peak impulse of 8.3 ms half-sine wave (unidirectional only)

Solder temperatures: 260 ºC for 10 s (maximum)

RF01000 Rev B, Sept 2011

High Reliability Product Group

Page 1 of 4

12 3 4

中文翻译

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与MXLSMBJ36AE3TR相关器件

型号	品牌	获取价格	描述	数据表
MXLSMBJ36ATR	MICROSEMI	获取价格	600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN
MXLSMBJ36CA	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MXLSMBJ36CA/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MXLSMBJ36CAE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 36V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MXLSMBJ36CAE3TR	MICROSEMI	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
MXLSMBJ36CATR	MICROSEMI	获取价格	600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN
MXLSMBJ40A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXLSMBJ40A/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXLSMBJ40AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXLSMBJ40AE3/TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 600W, 40V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

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