5秒后页面跳转
捷配首页

Datasheet > MXLSMBJ18A/TR
MXLSMBJ18A/TR PDF预览

MXLSMBJ18A/TR

更新时间： 2024-11-19 13:37:55
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网光电二极管
页数 文件大小 规格书
4页 167K
描述
Trans Voltage Suppressor Diode, 600W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

阅读下载

中文翻译

获取价格

MXLSMBJ18A/TR 技术参数

是否Rohs认证：不符合生命周期：Active
包装说明：R-PDSO-C2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.10.00.50
风险等级：5.47Is Samacsys：N
其他特性：HIGH RELIABILITY最大击穿电压：22.1 V
最小击穿电压：20 V击穿电压标称值：21.05 V
最大钳位电压：29.2 V配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码：DO-214AAJESD-30 代码：R-PDSO-C2
JESD-609代码：e0湿度敏感等级：1
最大非重复峰值反向功率耗散：600 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1.38 W认证状态：Not Qualified
最大重复峰值反向电压：18 V子类别：Transient Suppressors
表面贴装：YES技术：AVALANCHE
端子面层：Tin/Lead (Sn/Pb)端子形式：C BEND
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

MXLSMBJ18A/TR 数据手册

 浏览型号MXLSMBJ18A/TR的Datasheet PDF文件第2页浏览型号MXLSMBJ18A/TR的Datasheet PDF文件第3页浏览型号MXLSMBJ18A/TR的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
SURFACE MOUNT 600 W  
Transient Voltage Suppressor  
- Unidirectional (A) and Bidirectional (CA) construction  
- Available in both J-bend and Gull-wing terminations  
- Selections for 5.0 to 170 V standoff voltages (VWM  
)
LEVELS  
M, MA, MX, MXL  
DEVICES  
MSMBJ5.0A thru MSMBJ170CA, e3  
and MSMBG5.0A thru MSMBG170CA, e3  
FEATURES  
ƒ
ƒ
ƒ
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Optional up screening available by replacing the M prefix with MA, MX or MXL. These  
prefixes specify various screening and conformance inspection options based on  
MIL-PRF-19500. Refer to MicroNote 129 for more details on the screening options.  
ƒ
Axial-leaded equivalent packages for through-hole mounting available as MP6KE6.8A to  
MP6KE200CA  
Refer to table below  
for dimensions  
ƒ
ƒ
ƒ
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
RoHS compliant devices available by adding an “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
APPLICATIONS / BENEFITS  
ƒ
ƒ
ƒ
ƒ
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.  
Protection from switching transients & induced RF  
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance:  
o
o
o
o
Class 1: MSMB5.0A to MSMB120CA  
Class 2: MSMB5.0A to MSMB60CA  
Class 3: MSMB5.0A to MSMB30CA  
Class 4: MSMB5.0A to MSMB15CA  
ƒ
Secondary lightning protection per IEC61000-4-5 with 12 Ohms source impedance:  
o
o
Class 1: MSMB5.0A to MSMB36CA  
Class 2: MSMB5.0A to MSMB18CA  
MAXIMUM RATINGS  
ƒ
Peak Pulse Power dissipation at 25 ºC: 600 watts at 10/1000 μs (also see Figures 1, 2, and  
3) with impulse repetition rate (duty factor) of 0.01 % or less  
ƒ
ƒ
ƒ
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional  
Operating and Storage temperature: -65 °C to +150 °C  
Thermal resistance: 25 °C/W junction to lead, or 90 °C/W junction to ambient when mounted  
on FR4 PC board (1oz Cu) with recommended footprint (see page 2)  
ƒ
Steady-State Power dissipation: 5 watts at TL = 25 ºC, or 1.38 watts at TA = 25 ºC when  
mounted on FR4 PC board with recommended footprint (see page 2)  
ƒ
ƒ
Forward Surge at 25 ºC: 100 Amp peak impulse of 8.3 ms half-sine wave (unidirectional only)  
Solder temperatures: 260 ºC for 10 s (maximum)  
RF01000 Rev B, Sept 2011  
High Reliability Product Group  
Page 1 of 4  
1234

中文翻译

下载PDF

与MXLSMBJ18A/TR相关器件

型号 品牌 获取价格 描述 数据表
MXLSMBJ18AE3/TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 18V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXLSMBJ18AE3TR MICROSEMI

获取价格

 		600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
MXLSMBJ18ATR MICROSEMI

获取价格

 		600W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN
MXLSMBJ18CA MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 18V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MXLSMBJ18CA/TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 18V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MXLSMBJ18CAE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 18V V(RWM), Bidirectional, 1 Element, Silicon, DO-21
MXLSMBJ18CATR MICROSEMI

获取价格

 		600W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA, PLASTIC, SMBJ, 2 PIN
MXLSMBJ20A MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXLSMBJ20A/TR MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-2
MXLSMBJ20AE3 MICROSEMI

获取价格

 		Trans Voltage Suppressor Diode, 600W, 20V V(RWM), Unidirectional, 1 Element, Silicon, DO-2

与MXLSMBJ18A/TR相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证