是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | R-PSSO-G1 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.50 | 风险等级: | 5.39 |
其他特性: | HIGH RELIABILITY | 最大击穿电压: | 111 V |
最小击穿电压: | 100 V | 击穿电压标称值: | 105.5 V |
外壳连接: | CATHODE | 最大钳位电压: | 146 V |
配置: | SINGLE | 二极管元件材料: | SILICON |
二极管类型: | TRANS VOLTAGE SUPPRESSOR DIODE | JESD-30 代码: | R-PSSO-G1 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
最大非重复峰值反向功率耗散: | 30000 W | 元件数量: | 1 |
端子数量: | 1 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性: | BIDIRECTIONAL |
最大功率耗散: | 2.5 W | 认证状态: | Not Qualified |
最大重复峰值反向电压: | 90 V | 子类别: | Transient Suppressors |
表面贴装: | YES | 技术: | AVALANCHE |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MPLAD30KP90CAE3 | MICROSEMI |
类似代替 |
Trans Voltage Suppressor Diode, 30000W, 90V V(RWM), Bidirectional, 1 Element, Silicon, ROH |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MXLPLAD30KP90CA/TR | MICROSEMI |
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Trans Voltage Suppressor Diode, 30000W, 90V V(RWM), Bidirectional, 1 Element, Silicon, PLA | |
MXLPLAD30KP90CAE3 | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 90V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
MXLPLAD30KP90CAE3/TR | MICROSEMI |
获取价格 |
Trans Voltage Suppressor Diode, 30000W, 90V V(RWM), Bidirectional, 1 Element, Silicon, ROH | |
MXLPLAD30KP90CAE3TR | MICROSEMI |
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30000W, BIDIRECTIONAL, SILICON, TVS DIODE, ROHS COMPLIANT, PLASTIC PACKAGE-1 | |
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MXLPLAD6.5KP24AE3 | MICROSEMI |
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Trans Voltage Suppressor Diode, 6500W, 24V V(RWM), Unidirectional, 1 Element, Silicon, HAL |