Datasheet > MXLCE51E3TR

MXLCE51E3TR

更新时间： 2024-11-19 19:36:35

品牌	Logo	应用领域
美高森美 - MICROSEMI		局域网二极管
页数	文件大小	规格书
4页	225K
描述
Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC, CASE 1, 2 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MXLCE51E3TR 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	O-PALF-W2	针数：	2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.50	风险等级：	5.78
最大击穿电压：	69.3 V	最小击穿电压：	56.7 V
外壳连接：	ISOLATED	配置：	SINGLE
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	O-PALF-W2	JESD-609代码：	e3
最大非重复峰值反向功率耗散：	1500 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性：	UNIDIRECTIONAL
最大功率耗散：	1.52 W	认证状态：	Not Qualified
最大重复峰值反向电压：	51 V	表面贴装：	NO
技术：	AVALANCHE	端子面层：	MATTE TIN
端子形式：	WIRE	端子位置：	AXIAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

MXLCE51E3TR 数据手册

LCE6.5 thru LCE170A, e3

1500 WATT LOW CAPACITANCE

TRANSIENT VOLTAGE SUPPRESSOR

S C O T T S D A L E D I V I S I O N

DESCRIPTION

APPEARANCE

This Transient Voltage Suppressor (TVS) product family includes a rectifier

diode element in series and opposite direction to achieve low capacitance

performance below 100 pF (see Figure 2). The low level of TVS capacitance

may be used for protecting higher frequency applications in inductive

switching environments or electrical systems involving secondary lightning

effects per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for

airborne avionics. With virtually instantaneous response, they also protect

from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. If bipolar transient

capability is required, two of these low capacitance TVS devices may be used

in parallel in opposite directions (anti-parallel) for complete ac protection as

shown in Figure 4.

CASE 1

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES

APPLICATIONS / BENEFITS

•

Unidirectional low-capacitance TVS (for bidirectional see

Figure 4)

•

Protection from switching transients and induced RF

Low capacitance for data line protection to 1 MHz

Economical plastic encapsulated TVS series for thru-

hole mounting

Protection for aircraft fast data rate lines up to Level 5

Waveform 4 and Level 2 Waveform 5A in RTCA/DO-

160D (also see MicroNote 130) & ARINC 429 with bit

rates of 100 kb/s (per ARINC 429, Part 1, par 2.4.1.1)

Suppresses transients up to 1500 watts @ 10/1000 µs

(see Figure 1)*

•

Clamps transient in less than 100 pico seconds

Working voltage (V_WM) range 6.5 V to 170 V

•

Protection from ESD and EFT per IEC 61000-4-2 and

IEC 61000-4-4

Secondary lightning protection per IEC61000-4-5 with

42 Ohms source impedance:

Class 1: LCE6.5 to LCE170A

Class 2: LCE6.5 to LCE150A

Class 3: LCE6.5 to LCE70A

Class 4: LCE6.5 to LCE36A

Options for screening in accordance with MIL-PRF-

19500 for JAN, JANTX, JANTXV, and JANS are also

available by adding MQ, MX, MV, MSP prefixes

respectively to part numbers, e.g. MXLCE6.5A,

MVLCE45A, etc.

•

Surface mount equivalent packages also available as

SMCJLCE6.5 - SMCJLCE170A or SMCGLCE6.5 -

SMCGLCE170A in separate data sheet (consult factory

for other surface mount options)

•

Secondary lightning protection per IEC61000-4-5 with

12 Ohms source impedance:

Class 1 : LCE6.5 to LCE90A

Class 2: LCE6.5 to LCE45 A

Class 3: LCE6.5 to LCE22A

Class 4: LCE6.5 to LCE11A

•

RoHS Compliant devices available by adding “e3” suffix

Metal hermetically sealed DO-13 axial-leaded

equivalents available in the LC6.5 - LC170A series in

separate data sheet

Secondary lightning protection per IEC61000-4-5 with

2 Ohms source impedance:

Class 2: LCE6.5 to LCE20A

Class 3: LCE6.5 to LCE10A

MAXIMUM RATINGS

MECHANICAL AND PACKAGING

•

1500 Watts for 10/1000 μs with repetition rate of 0.01% or

•

CASE: Void-free transfer molded thermosetting

epoxy body meeting UL94V-0

less* at lead temperature (T_L) 25^oC (See Figs. 1, 2, & 4)

•

Operating & Storage Temperatures: -65^oto +150^oC

TERMINATIONS: Tin-lead or RoHS Compliant

annealed matte-Tin plating readily solderable per

MIL-STD-750 method 2026

Thermal Resistance: 22^ºC/W junction to lead at 3/8

inch (10 mm) from body, or 82^ºC/W junction to ambient

when mounted on FR4 PC board with 4 mm²copper

pads (1oz) and track width 1 mm, length 25 mm

•

POLARITY: Cathode indicated by band

MARKING: Part number and polarity band

WEIGHT: 1.5 grams. (Approx)

•

Steady-State Power dissipation*: 5 watts at T_L= 40^oC,

or 1.52 watts at T_A= 25^ºC when mounted on FR4 PC

board described for thermal resistance

TAPE & REEL option: Standard per EIA-296 (add

“TR” suffix to part number)

Solder Temperatures: 260 ^oC for 10 s (maximum)

•

See “CASE 1” package dimensions on last page

* TVS devices are not typically used for dc power dissipation and are instead operated < V_WM(rated standoff voltage) except for transients that briefly

drive the device into avalanche breakdown (V_BRto V_Cregion) of the TVS element. Also see Figures 3 and 4 for further protection details in rated peak

pulse power for unidirectional and bidirectional configurations respectively.

Microsemi

Page 1

10-29-2008 REV F

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

12 3 4

中文翻译

下载PDF

与MXLCE51E3TR相关器件

型号	品牌	获取价格	描述	数据表
MXLCE51TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, PLA
MXLCE54	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 54V V(RWM), Unidirectional, 1 Element, Silicon, PLA
MXLCE54A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 54V V(RWM), Unidirectional, 1 Element, Silicon, PLA
MXLCE54AE3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode
MXLCE54ATR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 54V V(RWM), Unidirectional, 1 Element, Silicon, PLA
MXLCE54E3	MICROSEMI	获取价格	Trans Voltage Suppressor Diode
MXLCE54E3TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 54V V(RWM), Unidirectional, 1 Element, Silicon, ROH
MXLCE54TR	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 54V V(RWM), Unidirectional, 1 Element, Silicon, PLA
MXLCE58A	MICROSEMI	获取价格	Trans Voltage Suppressor Diode, 1500W, 58V V(RWM), Unidirectional, 1 Element, Silicon, PLA
MXLCE58AE3	MICROSEMI	获取价格	暂无描述

与MXLCE51E3TR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

23
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

15
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

45
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

45

产品中心

服务支持

精选活动

关于我们

帮助中心

MXLCE51E3TR

MXLCE51E3TR 技术参数

MXLCE51E3TR 数据手册

与MXLCE51E3TR相关器件

与MXLCE51E3TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MXLCE51E3TR

MXLCE51E3TR 技术参数

MXLCE51E3TR 数据手册

与MXLCE51E3TR相关器件

与MXLCE51E3TR相关文章

您还可以找

您在本页遇到什么问题？