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MXLCE51ATR

更新时间： 2024-11-20 10:15:59
品牌 Logo 应用领域
美高森美 - MICROSEMI 局域网二极管
页数 文件大小 规格书
4页 268K
描述
Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, PLASTIC, CASE 1, 2 PIN

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MXLCE51ATR 技术参数

是否Rohs认证： 不符合生命周期：Transferred
包装说明：PLASTIC, CASE 1, 2 PIN针数：2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.50风险等级：5.55
最大击穿电压：62.7 V最小击穿电压：56.7 V
外壳连接：ISOLATED配置：SINGLE
二极管元件材料：SILICON二极管类型：TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：O-PALF-W2JESD-609代码：e0
最大非重复峰值反向功率耗散：1500 W元件数量：1
端子数量：2封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：LONG FORM
峰值回流温度（摄氏度）：NOT SPECIFIED极性：UNIDIRECTIONAL
最大功率耗散：1.52 W认证状态：Not Qualified
最大重复峰值反向电压：51 V表面贴装：NO
技术：AVALANCHE端子面层：TIN LEAD
端子形式：WIRE端子位置：AXIAL
处于峰值回流温度下的最长时间：NOT SPECIFIED

MXLCE51ATR 数据手册

 浏览型号MXLCE51ATR的Datasheet PDF文件第2页浏览型号MXLCE51ATR的Datasheet PDF文件第3页浏览型号MXLCE51ATR的Datasheet PDF文件第4页 
TECHNICAL DATA SHEET  
Gort Road Business Park, Ennis, Co. Clare, Ireland.  
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298  
6 Lake Street, Lawrence, MA 01841  
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803  
Website: http://www.microsemi.com  
- High Reliability controlled devices  
1500 Watt Low Capacitance  
Transient Voltage Suppressor  
- Unidirectional (A) construction  
- Plastic encapsulated TVS series for Thru Hole mounting  
- Selections for 6.5 to 170 V standoff voltages (VWM)  
LEVELS  
M, MA, MX, MXL  
DEVICES  
MLCE6.5A thru MLCE170A, e3  
FEATURES  
.
.
.
.
.
.
High reliability controlled devices with wafer fabrication and assembly lot traceability  
100 % surge tested devices  
Unidirectional construction. For bidirectional option see Figure 4.  
Suppresses transients up to 1500 watts @10/1000µs (see Figure 1)  
Clamps transients in less than 100 pico seconds  
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes specify  
various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote  
129 for more details on the screening options.  
.
.
Surface mount equivalent packages also available as MSMC(G/J)LCE6.5A - MSMC(G/J)LCE170A in  
separate data sheet (consult factory for other surface mount options)  
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B  
.
.
RoHS Compliant devices available by adding “e3” suffix  
3σ lot norm screening performed on Standby Current ID  
CASE 1  
APPLICATIONS / BENEFITS  
.
.
.
Protection from switching transients and induced RF  
Low capacitance for data line protection to 1 MHz  
Protection for aircraft fast data rate lines up to Level 5 Waveform 4 and Level 2 Waveform 5A in  
RTCA/DO-160D (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per ARINC 429, Part  
1, par 2.4.1.1)  
.
.
Protection from ESD and EFT per IEC 61000-4-2 and IEC 61000-4-4  
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:  
o
o
o
o
Class 1: MLCE6.5A to MLCE170A  
Class 2: MLCE6.5A to MLCE150A  
Class 3: MLCE6.5A to MLCE70A  
Class 4: MLCE6.5A to MLCE36A  
.
.
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:  
o
o
o
o
Class 1 : MLCE6.5A to MLCE90A  
Class 2: MLCE6.5A to MLCE45 A  
Class 3: MLCE6.5A to MLCE22A  
Class 4: MLCE6.5A to MLCE11A  
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:  
o
o
Class 2: MLCE6.5A to MLCE20A  
Class 3: MLCE6.5A to MLCE10A  
MAXIMUM RATINGS  
.
Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000 μs (see Figure 1) with impulse repetition  
rate of 0.01% or less* at lead temperature TL of 25°C  
.
.
Operating & Storage Temperatures: -65 ºC to +150 ºC  
Thermal Resistance: 22 ºC/W junction to lead at 3/8 inch (10 mm) from body, or 82 ºC/W junction to  
ambient when mounted on FR4 PC board with 4 mm2 copper pads (1oz), track width 1 mm, length 25mm  
.
.
Steady-State Power dissipation*: 5 watts at TL = 40 ºC, or 1.52 watts at TA = 25 ºC when mounted on  
FR4 PC board described for thermal resistance  
Solder Temperatures: 260 ºC for 10 s (maximum)  
* TVS devices are not typically used for dc power dissipation and are instead operated at ≤ VWM except for transients that briefly  
drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see Figures 3 and 4 for further protection  
details in rated peak power for unidirectional and bidirectional configurations respectively.  
RF01009 Rev A, June 2010  
High Reliability Product Group  
Page 1 of 4  
1234

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