Datasheet > 存储 > 闪存> MX29LV401TMI-90

MX29LV401TMI-90

更新时间： 2024-11-01 22:19:27

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
56页	984K
描述
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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MX29LV401TMI-90 数据手册

ADVANCED INFORMATION

MX29LV401T/B

4M-BIT[512Kx8/256Kx16]CMOSSINGLEVOLTAGE

3VONLYFLASHMEMORY

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 524,288 x 8/262,144 x 16 switchable

• Singlepowersupplyoperation

• Status Reply

-Datapolling&Togglebitfordetectionofprogramand

eraseoperationcompletion.

- 3.0V only operation for read, erase and program

operation

• Fast access time: 55R/70/90ns

• Ready/Busy pin (RY/BY)

-Providesahardwaremethodofdetectingprogramor

eraseoperationcompletion.

• Lowpowerconsumption

• Sectorprotection

- 20mA maximum active current

- 0.2uA typical standby current

• Commandregisterarchitecture

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Byte x 1,

8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7)

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase Suspend capability.

- Hardware method to disable any combination of

sectors from program or erase operations

- Tempoary sector unprotect allows code changes in

previously locked sectors.

• 100,000minimumerase/programcycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

- Automatically program and verify data at specified

address

• Low VCC write inhibit is equal to or less than 2.3V

• Package type:

• Erasesuspend/EraseResume

- 44-pin SOP

- Suspends sector erase operation to read data from,

orprogramdatato,any sectorthatisnotbeingerased,

then resumes the erase.

- 48-pin TSOP

- 48-ball CSP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

GENERAL DESCRIPTION

The MX29LV401T/B is a 4-mega bit Flash memory or-

ganized as 512K bytes of 8 bits or 256K words of 16

bits. MXIC's Flash memories offer the most cost-effec-

tive and reliable read/write non-volatile random access

memory. The MX29LV401T/B is packaged in 44-pin

SOP, 48-pinTSOP and 48-ball CSP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV401T/B uses a 2.7V~3.6VVCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

The standard MX29LV401T/B offers access time as fast

as 55ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29LV401T/B has separate chip enable (CE) and

output enable (OE) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV401T/B uses a command register to manage

this functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

P/N:PM0853

REV. 0.0, SEP. 14, 2001

12 3 4 5 6 7...56

中文翻译

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与MX29LV401TMI-90相关器件

型号	品牌	获取价格	描述	数据表
MX29LV401TTC-70	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401TTC-90	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401TTI-70	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401TTI-90	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401TXBC-70	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401TXBC-90	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401TXBI-70	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401TXBI-90	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BB	Macronix	获取价格	64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV640BBMC-90G	Macronix	获取价格	Flash, 4MX16, 90ns, PDSO44, ROHS COMPLIANT, SOP-44

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