Datasheet > 存储 > 闪存> MX29LV401BMI-70

MX29LV401BMI-70

更新时间： 2024-01-02 13:30:21

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
56页	984K
描述
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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技术参数
数据手册

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MX29LV401BMI-70 技术参数

生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	0.500 INCH, PLASTIC, MO-175, SOP-44	针数：	44
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.52
最长访问时间：	70 ns	备用内存宽度：	8
启动块：	BOTTOM	命令用户界面：	YES
数据轮询：	YES	耐久性：	100000 Write/Erase Cycles
JESD-30 代码：	R-PDSO-G44	JESD-609代码：	e0
长度：	28.5 mm	内存密度：	4194304 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	部门数/规模：	1,2,1,7
端子数量：	44	字数：	262144 words
字数代码：	256000	工作模式：	ASYNCHRONOUS
最高工作温度：	85 °C	最低工作温度：	-40 °C
组织：	256KX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	SOP44,.63
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
并行/串行：	PARALLEL	电源：	3/3.3 V
编程电压：	3 V	认证状态：	Not Qualified
就绪/忙碌：	YES	座面最大高度：	3 mm
部门规模：	16K,8K,32K,64K	最大待机电流：	0.000005 A
子类别：	Flash Memories	最大压摆率：	0.03 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	2.7 V
标称供电电压 (Vsup)：	3 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	TIN LEAD	端子形式：	GULL WING
端子节距：	1.27 mm	端子位置：	DUAL
切换位：	YES	类型：	NOR TYPE
宽度：	12.6 mm	Base Number Matches：	1

MX29LV401BMI-70 数据手册

ADVANCED INFORMATION

MX29LV401T/B

4M-BIT[512Kx8/256Kx16]CMOSSINGLEVOLTAGE

3VONLYFLASHMEMORY

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 524,288 x 8/262,144 x 16 switchable

• Singlepowersupplyoperation

• Status Reply

-Datapolling&Togglebitfordetectionofprogramand

eraseoperationcompletion.

- 3.0V only operation for read, erase and program

operation

• Fast access time: 55R/70/90ns

• Ready/Busy pin (RY/BY)

-Providesahardwaremethodofdetectingprogramor

eraseoperationcompletion.

• Lowpowerconsumption

• Sectorprotection

- 20mA maximum active current

- 0.2uA typical standby current

• Commandregisterarchitecture

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Byte x 1,

8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7)

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase Suspend capability.

- Hardware method to disable any combination of

sectors from program or erase operations

- Tempoary sector unprotect allows code changes in

previously locked sectors.

• 100,000minimumerase/programcycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

- Automatically program and verify data at specified

address

• Low VCC write inhibit is equal to or less than 2.3V

• Package type:

• Erasesuspend/EraseResume

- 44-pin SOP

- Suspends sector erase operation to read data from,

orprogramdatato,any sectorthatisnotbeingerased,

then resumes the erase.

- 48-pin TSOP

- 48-ball CSP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

GENERAL DESCRIPTION

The MX29LV401T/B is a 4-mega bit Flash memory or-

ganized as 512K bytes of 8 bits or 256K words of 16

bits. MXIC's Flash memories offer the most cost-effec-

tive and reliable read/write non-volatile random access

memory. The MX29LV401T/B is packaged in 44-pin

SOP, 48-pinTSOP and 48-ball CSP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV401T/B uses a 2.7V~3.6VVCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

The standard MX29LV401T/B offers access time as fast

as 55ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29LV401T/B has separate chip enable (CE) and

output enable (OE) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV401T/B uses a command register to manage

this functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

P/N:PM0853

REV. 0.0, SEP. 14, 2001

12 3 4 5 6 7...56

中文翻译

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与MX29LV401BMI-70相关器件

型号	品牌	获取价格	描述	数据表
MX29LV401BMI-90	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401BTC-70	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401BTC-90	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401BTI-70	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401BTI-90	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401BXBC-70	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401BXBC-90	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401BXBI-70	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401BXBI-90	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV401T	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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