Datasheet > 存储 > 闪存> MX29LV400CTTI-55Q

MX29LV400CTTI-55Q

更新时间： 2024-02-06 05:07:39

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
68页	889K
描述
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

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MX29LV400C T/B

4M-BIT[512Kx8/256Kx16]CMOSSINGLEVOLTAGE

3VONLYFLASHMEMORY

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 524,288 x 8/262,144 x 16 switchable

• Singlepowersupplyoperation

• Ready/Busy# pin (RY/BY#)

-Providesahardwaremethodofdetectingprogramor

eraseoperationcompletion

- 3.0V only operation for read, erase and program

operation

• Fully compatible with MX29LV400T/B device

• Fast access time: 55R/70/90ns

• Sectorprotection

- Hardware method to disable any combination of

sectors from program or erase operations

-Temporarysectorunprotectallowscodechangesin

previously locked sectors

• Lowpowerconsumption

- 30mA maximum active current

- 0.2uA typical standby current

• Commandregisterarchitecture

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Byte x 1,

8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7)

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase Suspend capability

• CFI (Common Flash Interface) compliant

- Flash device parameters stored on the device and

provide the host system to access

• 100,000minimumerase/programcycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Package type:

- Automatically program and verify data at specified

address

- 44-pin SOP

- 48-pin TSOP

• Erasesuspend/EraseResume

- 48-ball CSP (6 x 8mm)

- Suspends sector erase operation to read data from,

orprogramdatato,any sectorthatisnotbeingerased,

then resumes the erase

- 48-ball CSP (4 x 6mm)

- All Pb-free devices are RoHS Compliant

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• Status Reply

- Data# Polling & Toggle bit for detection of program

anderaseoperationcompletion

• 20 years data retention

GENERAL DESCRIPTION

The MX29LV400C T/B is a 4-mega bit Flash memory

organized as 512K bytes of 8 bits or 256K words of 16

bits. MXIC's Flash memories offer the most cost-effec-

tive and reliable read/write non-volatile random access

memory. The MX29LV400C T/B is packaged in 44-pin

SOP, 48-pinTSOP and 48-ball CSP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV400C T/B uses a 2.7V~3.6V VCC

supply to perform the High Reliability Erase and auto

Program/Erase algorithms.

The standard MX29LV400C T/B offers access time as

fast as 55ns, allowing operation of high-speed micropro-

cessors without wait states. To eliminate bus conten-

tion, the MX29LV400C T/B has separate chip enable

(CE#) and output enable (OE#) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV400CT/B uses a command register to manage

this functionality. The command register allows for 100%

P/N:PM1155

REV. 1.5, APR. 24, 2006

12 3 4 5 6 7...68

中文翻译

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MX29LV400CTTI-55Q 替代型号

型号	品牌	替代类型	描述	数据表
M29W400BT55N1	STMICROELECTRONICS	功能相似	4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory

与MX29LV400CTTI-55Q相关器件

型号	品牌	获取价格	描述	数据表
MX29LV400CTTI-55R	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV400CTTI-70	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV400CTTI70G	Macronix	获取价格	SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV400CTTI-70G	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV400CTTI-90	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV400CTTI90G	Macronix	获取价格	SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV400CTTI-90G	Macronix	获取价格	4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV400CTTI90R	Macronix	获取价格	Flash, 256KX16, 90ns, PDSO48
MX29LV400CTXBC55	Macronix	获取价格	Flash, 256KX16, 55ns, PBGA48
MX29LV400CTXBC55G	Macronix	获取价格	Flash, 256KX16, 55ns, PBGA48

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