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MX29LV320MTMC-90G PDF预览

MX29LV320MTMC-90G

更新时间: 2024-09-16 05:08:07
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
70页 540K
描述
64M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY

MX29LV320MTMC-90G 数据手册

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MX29LV64xM H/L  
64M-BIT SINGLE VOLTAGE 3V ONLY  
UNIFORM SECTOR FLASH MEMORY  
FEATURES  
GENERAL FEATURES  
• Low Power Consumption  
• Single Power Supply Operation  
- 2.7 to 3.6 volt for read, erase, and program opera-  
tions  
- Active read current: 18mA(typ.)  
- Active write current: 20mA(typ.)  
- Standby current: 20uA(typ.)  
• Minimum 100,000 erase/program cycle  
• 20-years data retention  
• Configuration  
- 8,388,608 x 8 / 4,194,304 x 16 switchable (for  
MX29LV640M H/L)  
- 4,194,304 x 16 (for MX29LV641M H/L)  
• Sector structure  
SOFTWARE FEATURES  
• Support Common Flash Interface (CFI)  
- Flash device parameters stored on the device and  
provide the host system to access.  
• Program Suspend/Program Resume  
- Suspend program operation to read other sectors  
• Erase Suspend/ Erase Resume  
- Suspends sector erase operation to read data/pro-  
gram other sectors  
- 64KB(32KW) x 128  
• Sector Protection/Chip Unprotect  
- Provides sector group protect function to prevent  
program or erase operation in the protected sector  
group  
- Provides chip unprotect function to allow code  
changes  
- Provides temporary sector group unprotect function  
for code changes in previously protected sector groups  
• Secured Silicon Sector  
• Status Reply  
- Data# polling & Toggle bits provide detection of pro-  
gram and erase operation completion  
- Provides a 128-word/256-byte area for code or data  
that can be permanently protected.  
- Once this sector is protected, it is prohibited to pro-  
gram or erase within the sector again.  
• Latch-up protected to 250mA from -1V to Vcc + 1V  
• Low Vcc write inhibit is equal to or less than 1.5V  
• Compatible with JEDEC standard  
- Pin-out and software compatible to single power sup-  
ply Flash  
HARDWARE FEATURES  
• Ready/Busy (RY/BY#) Output (for MX29LV640M H/L  
only)  
- Provides a hardware method of detecting program  
and erase operation completion  
• Hardware Reset (RESET#) Input  
- Provides a hardware method to reset the internal  
state machine to read mode  
• WP#/ACC input  
PERFORMANCE  
• High Performance  
- Write protect (WP#) function allows protection high-  
est or lowest sector, regardless of sector protection  
settings  
- ACC (high voltage) accelerates programming time  
for higher throughput during system  
- Fast access time: 90ns  
- Page read time:25ns  
- Sector erase time: 0.5s (typ.)  
- 4 word/8 byte page read buffer  
- 16 word/ 32 byte write buffer:reduces programming  
time for multiple-word/byte updates  
PACKAGE  
• 48-pin TSOP (for MX29LV641M H/L)  
• 56-pin TSOP (for MX29LV640M H/L)  
GENERAL DESCRIPTION  
The MX29LV64xM H/L is a 64-mega bit Flash memory  
organized as 8M bytes of 8 bits or 4M words of 16 bits  
(for MX29LV640M H/L), or 4M words of 16bits (for  
MX29LV641M H/L). MXIC's Flash memories offer the  
most cost-effective and reliable read/write non-volatile  
random access memory. The MX29LV64xM H/L is pack-  
aged in 48-pinTSOP and 56-pinTSOP. It is designed to  
be reprogrammed and erased in system or in standard  
EPROM programmers.  
The standard MX29LV64xM H/L offers access time as  
fast as 90ns, allowing operation of high-speed micropro-  
cessors without wait states. To eliminate bus conten-  
tion, the MX29LV64xM H/L has separate chip enable  
P/N:PM1093  
REV. 1.1, AUG. 11, 2005  
1

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