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MX29LV320MTMC-90 PDF预览

MX29LV320MTMC-90

更新时间: 2024-11-06 11:57:07
品牌 Logo 应用领域
旺宏电子 - Macronix 闪存存储内存集成电路光电二极管
页数 文件大小 规格书
71页 984K
描述
32M-BIT [4M x 8/2M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY

MX29LV320MTMC-90 数据手册

 浏览型号MX29LV320MTMC-90的Datasheet PDF文件第2页浏览型号MX29LV320MTMC-90的Datasheet PDF文件第3页浏览型号MX29LV320MTMC-90的Datasheet PDF文件第4页浏览型号MX29LV320MTMC-90的Datasheet PDF文件第5页浏览型号MX29LV320MTMC-90的Datasheet PDF文件第6页浏览型号MX29LV320MTMC-90的Datasheet PDF文件第7页 
MX29LV320MT/B  
32M-BIT [4M x 8/2M x 16] SINGLE VOLTAGE 3V  
ONLY FLASH MEMORY  
FEATURES  
GENERAL FEATURES  
• Single Power Supply Operation  
• Minimum 100,000 erase/program cycle  
• 20-year data retention  
- 2.7 to 3.6 volt for read, erase, and program opera-  
tions  
SOFTWARE FEATURES  
• 4,194,304 x 8 / 2,097,152 x 16 switchable  
• Sector structure  
- 8KB (4KW) x 8 and 64KB(32KW) x 63  
• Sector Protection/Chip Unprotect  
• Support Common Flash Interface (CFI)  
- Flash device parameters stored on the device and  
provide the host system to access  
• Program Suspend/Resume  
- Provides sector group protect function to prevent pro-  
gram or erase operation in the protected sector group  
- Provides chip unprotect function to allow code changes  
- Provides temporary sector group unprotect function  
for code changes in previously protected sector groups  
• Secured Silicon Sector  
- Suspend program operation to read other sectors  
• Erase Suspend/Erase Resume  
- Suspends sector erase operation to read data from  
or program data to another sector which is not being  
erased  
• Status Reply  
- Provides a 128-word OTP area for permanent, se-  
cure identification  
- Data# polling & Toggle bits provide detection of pro-  
gram and erase operation completion  
- Can be programmed and locked at factory or by cus-  
tomer  
HARDWARE FEATURES  
• Latch-up protected to 250mA from -1V to VCC + 1V  
• Low VCC write inhibit is equal to or less than 1.5V  
• Compatible with JEDEC standard  
- Pin-out and software compatible to single power sup-  
ply Flash  
• Ready/Busy (RY/BY#) Output  
- Provides a hardware method of detecting program  
and erase operation completion  
• Hardware Reset (RESET#) Input  
- Provides a hardware method to reset the internal  
state machine to read mode  
PERFORMANCE  
• High Performance  
• WP#/ACC input  
- Write protect (WP#) function allows protection of two  
outermost boot sectors, regardless of sector protect  
status  
- Fast access time: 70R/90ns  
- Page read time:25ns  
- Sector erase time: 0.5s (typ.)  
- Effective write buffer word programming time:22us  
- 4 word/8 byte page read buffer  
- 16 word/ 32 byte write buffer:reduces programming  
time for multiple-word/byte updates  
• Low Power Consumption  
- ACC (high voltage) accelerates programming time  
for higher throughput during system  
PACKAGE  
• 44-pin SOP  
• 48-pinTSOP  
• 48-ball CSP  
- Active read current: 18mA(typ.)  
- Active write current: 50mA(typ.)  
- Standby current: 20uA(typ.)  
GENERAL DESCRIPTION  
The MX29LV320MT/B is a 32-mega bit Flash memory  
organized as 4M bytes of 8 bits or 2M bytes of 16 bits.  
MXIC's Flash memories offer the most cost-effective and  
reliable read/write non-volatile random access memory.  
The MX29LV320MT/B is packaged in 44-pin SOP, 48-  
pin TSOP and 48-ball CSP. It is designed to be repro-  
grammed and erased in system or in standard EPROM  
programmers.  
The standard MX29LV320MT/B offers access time as  
fast as 70ns, allowing operation of high-speed micropro-  
cessors without wait states. To eliminate bus conten-  
tion, the MX29LV320MT/B has separate chip enable  
(CE#) and output enable (OE#) controls.  
MXIC's Flash memories augment EPROM functionality  
with in-circuit electrical erasure and programming. The  
P/N:PM1129  
REV. 1.1, JUL. 14, 2005  
1

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