Datasheet > 存储 > 闪存> MX29LV161BMC-70

MX29LV161BMC-70

更新时间： 2023-12-18 00:00:00

品牌	Logo	应用领域
旺宏电子 - Macronix		闪存存储内存集成电路光电二极管
页数	文件大小	规格书
58页	993K
描述
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MX29LV161BMC-70 技术参数

生命周期：	Obsolete	零件包装代码：	SOIC
包装说明：	SOP, SOP44,.63	针数：	44
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.32.00.51	风险等级：	5.35
Is Samacsys：	N	最长访问时间：	70 ns
备用内存宽度：	8	启动块：	BOTTOM
命令用户界面：	YES	数据轮询：	YES
JESD-30 代码：	R-PDSO-G44	JESD-609代码：	e0
长度：	28.5 mm	内存密度：	16777216 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	部门数/规模：	1,2,1,31
端子数量：	44	字数：	1048576 words
字数代码：	1000000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	1MX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	SOP	封装等效代码：	SOP44,.63
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
并行/串行：	PARALLEL	电源：	3/3.3 V
编程电压：	3 V	认证状态：	Not Qualified
座面最大高度：	3 mm	部门规模：	16K,8K,32K,64K
最大待机电流：	0.000005 A	子类别：	Flash Memories
最大压摆率：	0.03 mA	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子面层：	TIN LEAD
端子形式：	GULL WING	端子节距：	1.27 mm
端子位置：	DUAL	切换位：	YES
类型：	NOR TYPE	宽度：	12.6 mm
Base Number Matches：	1

MX29LV161BMC-70 数据手册

MX29LV161T/B

16M-BIT[2Mx8/1Mx16]CMOSSINGLEVOLTAGE

3VONLYFLASHMEMORY

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 2,097,152 x 8/1,048,576 x 16 switchable

• Singlepowersupplyoperation

-Datapolling&Togglebitfordetectionofprogramand

eraseoperationcompletion.

• Ready/Busy pin (RY/BY)

- 3.0V only operation for read, erase and program

operation

-Providesahardwaremethodofdetectingprogramor

eraseoperationcompletion.

• Fast access time: 70/90ns

• Sectorprotection

• Lowpowerconsumption

- Hardware method to disable any combination of

sectors from program or erase operations

- Tempoary sector unprotect allows code changes in

previously locked sectors.

- 20mA maximum active current

- 0.2uA typical standby current

• Commandregisterarchitecture

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Bytex1,

8K-Bytex2, 32K-Bytex1, and 64K-Byte x31)

• Auto Erase (chip & sector) and Auto Program

-Automaticallyeraseanycombinationofsectorswith

Erase Suspend capability.

• 100,000minimumerase/programcycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Low VCC write inhibit is equal to or less than 2.3V

• Package type:

- Automatically program and verify data at specified

address

- 44-pin SOP

• Erasesuspend/EraseResume

- 48-pin TSOP

- Suspends sector erase operation to read data from,

orprogramdatato,any sectorthatisnotbeingerased,

then resumes the erase.

- 48 Ball CSP

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

• Status Reply

GENERAL DESCRIPTION

The MX29LV161T/B is a 16-mega bit Flash memory or-

ganized as 2M bytes of 8 bits or 1M words of 16 bits.

MXIC's Flash memories offer the most cost-effective

and reliable read/write non-volatile random access

memory. The MX29LV161T/B is packaged in 44-pin

SOP, 48-pin TSOP, and 48CSP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV161T/B uses a 2.7V~3.6VVCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

The standard MX29LV161T/B offers access time as fast

as 70ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29LV161T/B has separate chip enable (CE) and

output enable (OE) controls.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV161T/B uses a command register to manage

this functionality. The command register allows for 100%

P/N:PM0855

REV. 1.0, SEP. 24, 2001

12 3 4 5 6 7...58

中文翻译

下载PDF

与MX29LV161BMC-70相关器件

型号	品牌	获取价格	描述	数据表
MX29LV161BMC-90	Macronix	获取价格	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV161BTC-70	Macronix	获取价格	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV161BTC-70R	Macronix	获取价格	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV161BTC-90	Macronix	获取价格	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV161BTC-90R	Macronix	获取价格	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV161BTI-70	Macronix	获取价格	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV161BTI-70R	Macronix	获取价格	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV161BTI-90	Macronix	获取价格	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV161BTI-90R	Macronix	获取价格	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MX29LV161BXBC-70	Macronix	获取价格	16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY

与MX29LV161BMC-70相关文章

最详细资料解析：BA5917AFP参数说明、引脚说明
2024-07-02

2
MAX232IDR数据手册：产品特性、电气参数、替代型号推荐
2024-07-02

1
2N7002DW数据手册：参数解读、引脚信息、替代型号推荐
2024-07-02

1
网络滤波器、EMI滤波器与EMC滤波器在电子元器件中的分类关系
2024-07-02

2

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29LV161BMC-70

MX29LV161BMC-70 技术参数

MX29LV161BMC-70 数据手册

与MX29LV161BMC-70相关器件

与MX29LV161BMC-70相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MX29LV161BMC-70

MX29LV161BMC-70 技术参数

MX29LV161BMC-70 数据手册

与MX29LV161BMC-70相关器件

与MX29LV161BMC-70相关文章

您还可以找

您在本页遇到什么问题？